Abstract: In one aspect, the present invention provides a method of promoting nucleation and/or growth of a conductive film on a solid substrate. In certain embodiments, the method comprises contacting at least a portion of the surface of the solid substrate with a volatile metal precursor in the presence of a background gas, wherein the volatile metal precursor is chemisorbed or physisorbed to at least a portion of the surface of the solid substrate to provide a metal precursor-adsorbed surface, and contacting at least a portion of the metal precursor-adsorbed substrate with an electron beam in the presence of the background gas. The present invention further provides nanodevices and/or microdevices comprising a conductive film prepared according to the methods described herein.