Patents by Inventor Zachary Stum
Zachary Stum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8536674Abstract: A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.Type: GrantFiled: December 20, 2010Date of Patent: September 17, 2013Assignee: General Electric CompanyInventors: Cheng-Po Chen, Emad Andarawis Andarawis, Vinayak Tilak, Zachary Stum
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Patent number: 8377756Abstract: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.Type: GrantFiled: July 26, 2011Date of Patent: February 19, 2013Assignee: General Electric CompanyInventors: Stephen Daley Arthur, Kevin Matocha, Peter Sandvik, Zachary Stum, Peter Losee, James McMahon
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Publication number: 20130026559Abstract: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.Type: ApplicationFiled: July 26, 2011Publication date: January 31, 2013Inventors: Stephen Daley Arthur, Kevin Matocha, Peter Sandvik, Zachary Stum, Peter Losee, James McMahon
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Publication number: 20120153427Abstract: A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.Type: ApplicationFiled: December 20, 2010Publication date: June 21, 2012Inventors: Cheng-Po Chen, Emad Andarawis Andarawis, Vinayak Tilak, Zachary Stum
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Publication number: 20100123140Abstract: The present invention generally relates to a method for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, the present invention provides a method for the manufacture of a semiconductor device based upon a silicon carbide substrate and comprising an oxide layer comprising incorporating at least one additive into the atomic structure of the oxide layer. Semiconductor devices, such as MOSFETS, based upon a substrate treated according to the present method are expected to have inversion layer mobilities of at least about 60 cm2/Vs.Type: ApplicationFiled: November 20, 2008Publication date: May 20, 2010Applicant: GENERAL ELECTRIC COMPANYInventors: Victor Lienkong Lou, Kevin Sean Matocha, Aveek Chatterjee, Vinayak Tilak, Stephen Arthur, Zachary Stum
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Patent number: 7542546Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.Type: GrantFiled: August 27, 2007Date of Patent: June 2, 2009Assignee: Cornell Research Foundation, Inc.Inventors: Robert E. Thorne, Zachary Stum, Kevin O'Neill, Jan Kmetko
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Publication number: 20080165929Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.Type: ApplicationFiled: August 27, 2007Publication date: July 10, 2008Inventors: Robert E. Thorne, Zachary Stum, Kevin O'Neill, Jan Kmetko
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Patent number: 7263162Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.Type: GrantFiled: September 19, 2005Date of Patent: August 28, 2007Assignee: Cornell Research Foundation, Inc.Inventors: Robert E. Thorne, Zachary Stum, Kevin O'Neill, Jan Kmetko
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Publication number: 20060086315Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.Type: ApplicationFiled: September 19, 2005Publication date: April 27, 2006Inventors: Robert Thorne, Zachary Stum, Kevin O'Neill, Jan Kmetko