Patents by Inventor Zahariev Dimitrov
Zahariev Dimitrov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150162482Abstract: A method for forming a solar cell with selective emitters is provided. The method for forming a solar cell with selective emitters includes providing a substrate; forming a first texture structure on a first surface of the substrate; performing a doping process to the first surface of the substrate to form a first doping region in the substrate; forming a pattered barrier layer in a second region on the first surface of the substrate, wherein another portion of the substrate in a first region is exposed; performing a second texture etching process to etch the first region of the substrate uncovered by the patterned barrier layer; removing the patterned barrier layer; and forming an electrode on the second region of the substrate.Type: ApplicationFiled: February 16, 2015Publication date: June 11, 2015Inventors: DIMITRE ZAHARIEV DIMITROV, CHING-HSI LIN, CHUNG-WEN LAN, DER-CHIN WU
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Patent number: 8987038Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.Type: GrantFiled: June 21, 2011Date of Patent: March 24, 2015Assignee: Industrial Technology Research InstituteInventors: Dimitre Zahariev Dimitrov, Ching-Hsi Lin, Chung-Wen Lan, Der-Chin Wu
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Publication number: 20130133728Abstract: A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer.Type: ApplicationFiled: June 5, 2012Publication date: May 30, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Der-Chin Wu, Jui-Chung Shiao, Chien-Hsun Chen, Ching-Hsi Lin, Dimitre Zahariev Dimitrov
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Publication number: 20120090673Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.Type: ApplicationFiled: June 21, 2011Publication date: April 19, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Dimitre Zahariev Dimitrov, Ching-Hsi Lin, Chung-Wen Lan, Der-Chin Wu
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Patent number: 8124535Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.Type: GrantFiled: February 11, 2010Date of Patent: February 28, 2012Assignee: Industrial Technology Research InstituteInventors: Ching-Hsi Lin, Chien-Rong Huang, Dimitre Zahariev Dimitrov
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Patent number: 8053270Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.Type: GrantFiled: June 16, 2008Date of Patent: November 8, 2011Assignee: Industrial Technology Research InstituteInventors: Dimitre Zahariev Dimitrov, Chien-Rong Huang, Ching-Hsi Lin
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Publication number: 20110143484Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.Type: ApplicationFiled: February 11, 2010Publication date: June 16, 2011Applicant: Industrial Technology Research InstituteInventors: Ching-Hsi Lin, Chien-Rong Huang, Dimitre Zahariev Dimitrov
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Publication number: 20090311821Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.Type: ApplicationFiled: June 16, 2008Publication date: December 17, 2009Applicant: Industrial Technology Research InstituteInventors: Zahariev Dimitrov, Chien-Rong Huang, Ching-Hsi Lin