Patents by Inventor Zahia Bougrioua

Zahia Bougrioua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer
    Patent number: 7282381
    Abstract: The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically, the invention relates to a method of producing a self-supporting substrate comprising a III-nitride, in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used, for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than 2?.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: October 16, 2007
    Assignee: Centre National de la Recherche Scientifique (CNRS)
    Inventors: Eric Pascal Feltin, Zahia Bougrioua, Gilles Nataf
  • Method of producing self supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
    Publication number: 20070072396
    Abstract: The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically, the invention relates to a method of producing a self-supporting substrate comprising a III-nitride, in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used, for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than 2?.
    Type: Application
    Filed: September 24, 2004
    Publication date: March 29, 2007
    Applicant: Centre National de la Recherche Scientifique(CNRS)
    Inventors: Eric Feltin, Zahia Bougrioua, Gilles Nataf