Patents by Inventor Zaidi Shoaib

Zaidi Shoaib has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Energy adjusted write pulses in phase-change memory cells
    Patent number: 7859894
    Abstract: An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.
    Type: Grant
    Filed: January 10, 2008
    Date of Patent: December 28, 2010
    Assignee: Qimonda AG
    Inventors: Thomas Happ, Zaidi Shoaib
  • ENERGY ADJUSTED WRITE PULSES IN PHASE-CHANGE MEMORY CELLS
    Publication number: 20080106928
    Abstract: An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.
    Type: Application
    Filed: January 10, 2008
    Publication date: May 8, 2008
    Inventors: Thomas Happ, Zaidi Shoaib
  • Energy adjusted write pulses in phase-change memories
    Patent number: 7327623
    Abstract: A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: February 5, 2008
    Assignee: Infineon Technologies AG
    Inventors: Thomas Happ, Zaidi Shoaib
  • Energy adjusted write pulses in phase-change memories
    Publication number: 20070014173
    Abstract: A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.
    Type: Application
    Filed: September 20, 2006
    Publication date: January 18, 2007
    Inventors: Thomas Happ, Zaidi Shoaib
  • Energy adjusted write pulses in phase-change memories
    Patent number: 7113424
    Abstract: A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: September 26, 2006
    Assignee: Infineon Technologies AG
    Inventors: Thomas Happ, Zaidi Shoaib
  • Energy adjusted write pulses in phase-change memories
    Publication number: 20060109707
    Abstract: A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.
    Type: Application
    Filed: November 23, 2004
    Publication date: May 25, 2006
    Inventors: Thomas Happ, Zaidi Shoaib