Abstract: This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.

Abstract: Proposed are a disk array apparatus and a control method thereof which facilitate data processing such as write processing and read processing even if the block sizes handled by a host computer are different.

Abstract: A storage apparatus includes: a host control unit for sending/receiving data to/from a host server; a drive control unit for sending/receiving the data to/from a storage device; a cache memory for temporarily storing the data sent and received between the host control unit and the drive control unit; a switch for switching between a transfer source and a transfer destination when transferring the data by selecting the transfer source and the transfer destination from among the host control unit, the cache memory, and the drive control unit; and a controller for controlling the host control unit, the drive control unit, and the switch; wherein processing for generating an error check code for the data and error check processing using the error check code are executed by the switch or are distributed among and executed by the host control unit, the drive control unit, the switch, and the controller.

Abstract: This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.