Abstract: Prefetch aware LRU cache replacement policy is described. An example of an apparatus includes one or more processors including a graphic processor, the graphics processor including a load store cache having multiple cache lines (CLs), each including bits for a cache line level (CL level) and one or more sectors for data storage; wherein the graphics processor is to receive one or more data elements for storage in the cache; set a CL level to track each CL receiving data, including setting CL level 1 for a CL receiving data in response to a miss in the cache and setting a CL level 2 for a CL receiving prefetched data in response to a prefetch request, and, upon determining that space is required in the cache to store data, apply a cache replacement policy, the policy being based at least in part on set CL levels for the CLs.

Abstract: A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.

Abstract: A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.