Patents by Inventor Zane JAMAL-EDDINE

Zane JAMAL-EDDINE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUNNEL JUNCTION ULTRAVIOLET LIGHT EMITTING DIODES WITH ENHANCED LIGHT EXTRACTION EFFICIENCY
    Publication number: 20230335675
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 µm before reaching the inclined sidewall.
    Type: Application
    Filed: April 13, 2023
    Publication date: October 19, 2023
    Inventors: Siddharth RAJAN, Yuewei ZHANG, Zane JAMAL-EDDINE, Fatih AKYOL
  • Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
    Patent number: 11658267
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.
    Type: Grant
    Filed: November 2, 2021
    Date of Patent: May 23, 2023
    Assignee: Ohio State Innovation Foundation
    Inventors: Siddharth Rajan, Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol
  • TUNNEL JUNCTION ULTRAVIOLET LIGHT EMITTING DIODES WITH ENHANCED LIGHT EXTRACTION EFFICIENCY
    Publication number: 20220059724
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.
    Type: Application
    Filed: November 2, 2021
    Publication date: February 24, 2022
    Inventors: Siddharth RAJAN, Yuewei ZHANG, Zane JAMAL-EDDINE, Fatih AKYOL
  • Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
    Patent number: 11211525
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: December 28, 2021
    Assignee: Ohio State Innovation Foundation
    Inventors: Siddharth Rajan, Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol
  • TUNNEL JUNCTION ULTRAVIOLET LIGHT EMITTING DIODES WITH ENHANCED LIGHT EXTRACTION EFFICIENCY
    Publication number: 20200075809
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.
    Type: Application
    Filed: May 1, 2018
    Publication date: March 5, 2020
    Inventors: Siddharth RAJAN, Yuewei ZHANG, Zane JAMAL-EDDINE, Fatih AKYOL