Abstract: An example chiplet includes a first die, a second die, a first clock mesh, and a second clock mesh. A first clock circuit in the first die includes a first clock generation circuit and a first drive buffer circuit. A second clock circuit in the second die includes a second drive buffer circuit. An input end of the first drive buffer circuit is coupled to a first output end of the first clock generation circuit, and a first output end of the first drive buffer circuit is coupled to an input end of the first clock mesh. An input end of the second drive buffer circuit is coupled to a second output end of the first clock generation circuit, and a first output end of the second drive buffer circuit is coupled to an input end of the second clock mesh.

Abstract: An example standard cell includes: a first active region and a second active region; a first gate strip, where the first gate strip extends in a first direction and is located away from a substrate; two second gate strips, where the first gate strip is located between the two second gate strips, and two ends of the second active region are located close to the substrate; and two spacing regions and two first shallow trench isolation regions, where the first active region is located between the two spacing regions, the second active region is located between the two first shallow trench isolation regions, and a width of each of the two spacing regions and a width of each of the two first shallow trench isolation regions are equal to an arrangement spacing between the first gate strip and the two second gate strips.

Abstract: This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Abstract: This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. Apart that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.