Abstract: A component, system, and method for improved foreline cleaning of semiconductor chambers and components are disclosed herein. In one example, a processing chamber component includes a foreline constructed from stainless steel having a circular cross sectional shape and an inner surface. The foreline further includes a first end configured to couple to a processing chamber, a second end configured to couple to a valve, and a coating disposed within the inner surface of the foreline, the coating having a thickness between about 150 nanometers and about 525 nanometer. Further, the first end includes a first flange, the second end comprises a second flange, wherein the first end and the second end are coupled by a bend. Further, the coating has properties configured to reduce depositions within the foreline.

Abstract: Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

Abstract: Exemplary semiconductor processing chambers may include a chamber body having sidewalls and a base. The chambers may include a pumping liner seated atop the chamber body. The pumping liner may at least partially define an annular pumping plenum and at least one exhaust aperture that fluidly couples the pumping plenum with an interior of the chamber body. The chambers may include a purge ring seated below the pumping liner. The purge ring may define an annular channel that extends about a body of the purge ring. The purge ring may define a gas inlet that is fluidly coupled with the annular channel. The purge ring may define purge ports that are disposed at different radial positions about the purge ring, each of the purge ports being aligned and in fluid communication with the pumping plenum. The chambers may include a purge gas source coupled with the gas inlet.

Abstract: Exemplary processing chambers may include a body having sidewalls and a bottom plate. The bottom plate may define an exhaust opening and a gas inlet. The chambers may include a faceplate seated atop the body. The chambers may include a purge ring seated atop the bottom plate. The purge ring may include a ring body having an outer edge and an inner edge defining an open interior. The ring body may have a surface disposed against the bottom plate. The ring body may define an opening aligned with the exhaust opening. The surface may define a fluid port aligned and coupled with the gas inlet. The surface may define arcuate grooves extending into the fluid port. The arcuate grooves may be parallel with the inner and outer edges. The surface may define radial grooves extending from the open interior to an arcuate groove.