Patents by Inventor Ze Dong

Ze Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11555009
    Abstract: The invention provides 2-(substituted phenylhetero) aromatic formate FTO inhibitors, a preparation method thereof, and applications thereof. Specifically, disclosed in the present invention are a 2-(substituted phenylhetero) aromatic formate compound represented by the following formula (I), and a pharmaceutically acceptable salt, a hydrate or a solvate thereof, which can be used as an FTO targeting inhibitor for treating diseases associated with FTO targets, including obesity, metabolic syndrome (MS), type 2 diabetes (T2D), Alzheimer's diseases, and cancers such as breast cancers, small-cell lung cancers, human bone marrow rhabdomyosarcoma, pancreatic cancer, malignant glioblastoma and the like.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: January 17, 2023
    Assignee: SHANGHAI INSTITUTE OF MATERIA MEDICA, CHINESE ACADEMY OF SCIENCES
    Inventors: Caiguang Yang, Yue Huang, Ze Dong, Tao Zhang, Hongjiao Xu
  • Publication number: 20200079727
    Abstract: The invention provides 2-(substituted phenylhetero) aromatic formate FTO inhibitors, a preparation method thereof, and applications thereof. Specifically, disclosed in the present invention are a 2-(substituted phenylhetero) aromatic formate compound represented by the following formula (I), and a pharmaceutically acceptable salt, a hydrate or a solvate thereof, which can be used as an FTO targeting inhibitor for treating diseases associated with FTO targets, including obesity, metabolic syndrome (MS), type 2 diabetes (T2D), Alzheimer's diseases, and cancers such as breast cancers, small-cell lung cancers, human bone marrow rhabdomyosarcoma, pancreatic cancer, malignant glioblastoma and the like.
    Type: Application
    Filed: March 1, 2018
    Publication date: March 12, 2020
    Inventors: Caiguang YANG, Yue HUANG, Ze DONG, Tao ZHANG, Hongjiao XU
  • Patent number: 9945022
    Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: April 17, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Patent number: 9793999
    Abstract: A novel digital signal processing scheme (DSP) for quadrature duobinary (QDB) spectrum shaped polarization multiplexed quadrature phase shift keying (PM-QPSK) based on multi-modulus blind equalizations (MMBE) is proposed and demonstrated with both simulation and experimental results. The key algorithms for this novel digital signal processing scheme include the cascaded multi-modulus algorithm (CMMA) for blind polarization de-multiplexing, multi-modulus QPSK partitioning frequency offset estimation (FOE) and two stage carrier phase recovery (CPR) with maximum likelihood phase estimation. The final signal is detected by maximum-likelihood sequence detection (MLSD) for data BER measurement. The feasibility of the proposed digital signal processing scheme is demonstrated by the experiment of 112 Gb/s QDB spectrum shaped PM-QPSK signal with a 25 GHz bandwidth waveshaper for Nyquist WDM channels.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: October 17, 2017
    Assignee: ZTE Corporation
    Inventors: Jianjun Yu, Ze Dong, Hung-Chang Chien
  • Patent number: 9748367
    Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: August 29, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Publication number: 20170047436
    Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: November 1, 2016
    Publication date: February 16, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • Publication number: 20170044655
    Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: October 31, 2016
    Publication date: February 16, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • Patent number: 9570627
    Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: February 14, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Patent number: 9559784
    Abstract: An optical transmitter transmits a dual polarization optical Nyquist frequency domain multiplexed signal. The signal includes a first polarization component and a second polarization component. Each component comprises multiple subchannels, possibly having different subchannel bandwidths and different modulation schemes. An optical receiver receives the signal and recovers transmitted data.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: January 31, 2017
    Assignee: ZTE Corporation
    Inventors: Hung-Chang Chien, Jianjun Yu, Ze Dong
  • Patent number: 9530640
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: December 27, 2016
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Publication number: 20160329433
    Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.
    Type: Application
    Filed: June 24, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • Publication number: 20160329209
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (0) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: June 24, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • Patent number: 9479252
    Abstract: An optical transmitter determines the transfer function in the reference-based pre-equalization for applying to an optically modulated signal at the transmitter. The determined pre-equalization transfer function is made robust to linewidth inaccuracy of the optical source by performing phase correction during the calculation of the pre-equalization transfer function. The phase correction includes averaging a number of consecutive received phase samples. The determined pre-equalization transfer function is applied to modulated signals prior to the transmission over an optical medium.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: October 25, 2016
    Assignee: ZTE Corporation
    Inventors: Jianjun Yu, Ze Dong
  • Patent number: 9369228
    Abstract: A simplified coherent receiver based on heterodyne detection with only two balanced photo detectors (PD) and two analog-to-digital converters (ADC) is disclosed. The polarization diversity hybrid can be simplified relative to the conventional one. The detected intermediate frequency signals are first down converted to baseband with I/Q separation.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: June 14, 2016
    Assignee: ZTE (USA) Inc.
    Inventors: Jianjun Yu, Ze Dong, Hung-Chang Chien
  • Patent number: 9356702
    Abstract: The disclosure relates to a method for optical frequency-locked multi-carrier generation based on one directly-modulated laser (DML) and one phase modulator (PM) in cascade driven by sinusoidal waveform (at the same or different frequency). When the DML and PM is driven by the same frequency RF signal at 12.5 GHz, adopting this method, 16 optical subcarriers with 12.5-GHz frequency spacing are generated with power difference less than 3 dB. When the DML and PM is driven by the different frequency with DML at 12.5 Ghz and PM at 25 GHz, over 24 optical subcarriers are generated with 12.5-GHz frequency spacing and amplitude fluctuation less than 3 dB. The number of the generated optical subcarriers can be further increased when the driving power for the DML is increased.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: May 31, 2016
    Assignee: ZTE (USA) Inc.
    Inventors: Jianjun Yu, Ze Dong
  • Patent number: 9294199
    Abstract: An optical transmitter comprises: first and second sets of optical in-phase and quadrature modulators; an integrable tunable laser assembly; a first polarization beam splitter that is configured to divide the continuous-waveform optical signal into a x-polarized tributary and a y-polarized tributary, each of the x-polarized tributary and the y-polarized tributary is modulated by one of the first and second sets of optical in-phase and quadrature modulators in accordance with the two respective input signals; a second polarization beam splitter that is configured to combine the modulated x-polarized tributary and the modulated y-polarized tributary into one optical signal; and an optical modulator that is configured to modulate the combined optical signal using a driving voltage, wherein the driving voltage has a bias point that is reduced by a predefined offset from a predefined reference voltage level.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: March 22, 2016
    Assignee: ZTE (USA) INC.
    Inventors: Hung-Chang Chien, Jianjun Yu, Ze Dong
  • Patent number: 9209908
    Abstract: A heterodyne optical signal detector and method performed thereby, the signal detector including an optical signal spectrum shaper operable to modify the shape of the frequency spectrum of a received optical signal, a laser local oscillator (LO), and polarization beam splitters (PBSs) to divide the signal and the LO into orthogonal components, waveguides in which intermediate frequency (IF) signals are formed, balanced photodetectors (BPDs) arranged to receive the IF signals and operable to convert the IF signals into electric signals, and analog to digital converters (ADCs) that digitize the electric signals.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: December 8, 2015
    Assignee: ZTE (USA) Inc.
    Inventors: Jianjun Yu, Ze Dong, Hung-Chang Chien
  • Publication number: 20150229405
    Abstract: A novel digital signal processing scheme (DSP) for quadrature duobinary (QDB) spectrum shaped polarization multiplexed quadrature phase shift keying (PM-QPSK) based on multi-modulus blind equalizations (MMBE) is proposed and demonstrated with both simulation and experimental results. The key algorithms for this novel digital signal processing scheme include the cascaded multi-modulus algorithm (CMMA) for blind polarization de-multiplexing, multi-modulus QPSK partitioning frequency offset estimation (FOE) and two stage carrier phase recovery (CPR) with maximum likelihood phase estimation. The final signal is detected by maximum-likelihood sequence detection (MLSD) for data BER measurement. The feasibility of the proposed digital signal processing scheme is demonstrated by the experiment of 112 Gb/s QDB spectrum shaped PM-QPSK signal with a 25 GHz bandwidth waveshaper for Nyquist WDM channels.
    Type: Application
    Filed: August 15, 2013
    Publication date: August 13, 2015
    Inventors: Jianjun Yu, Ze Dong, Hung-Chang Chien
  • Patent number: 9106343
    Abstract: An optical signal transmitting system, comprising: an optical transmitter including one or more input terminals and an output terminal; and a temporal polarization interleaver including an input terminal and an output terminal, wherein the output terminal of the optical transmitter is communicatively coupled to the input terminal of the temporal polarization interleaver, wherein: the optical transmitter is configured to receive one or more input signals through its one or more input terminals, generate an output signal using the one or more input signals, the output signal including a x-polarized tributary and a y-polarized tributary that is pulse-to-pulse aligned with the x-polarized tributary, and transmit the output signal to the temporal polarization interleaver; and the temporal polarization interleaver is configured to receive the output signal from the optical transmitter and cause a predefined phase delay to one of the x-polarized tributary and the y-polarized tributary.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: August 11, 2015
    Assignee: ZTE (USA) Inc.
    Inventors: Hung-Chang Chien, Jianjun Yu, Ze Dong
  • Patent number: 8983297
    Abstract: Methods and devices are provided to facilitate production of optical signals that exhibit reduced crosstalk noise and intersymbol interference. In some configurations, a multi-stage optical interleaver, including a first and a second optical interleaver, is used to process a first and a second set of input optical channels. The composite optical output of the multi-stage interleaver includes the first set of optical channels and the second set of optical channels, where each of the first and second set of input optical channels is processed once by the first optical interleaver and once by the second optical interleaver. As such, the first and second sets of input optical channels are each filtered twice using only two optical interleavers.
    Type: Grant
    Filed: June 8, 2012
    Date of Patent: March 17, 2015
    Assignee: ZTE (USA) Inc.
    Inventors: Hung-Chang Chien, Jianjun Yu, Ze Dong