Patents by Inventor ZE-DONG GAO

ZE-DONG GAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making oxide semiconductor film
    Patent number: 9945022
    Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: April 17, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Method for making thim film transistor
    Patent number: 9748367
    Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: August 29, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • METHOD FOR MAKING THIM FILM TRANSISTOR
    Publication number: 20170047436
    Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: November 1, 2016
    Publication date: February 16, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • METHOD FOR MAKING OXIDE SEMICONDUCTOR FILM
    Publication number: 20170044655
    Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: October 31, 2016
    Publication date: February 16, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • Thim film transistor and method for making the same, thim film transistor panel and display device
    Patent number: 9570627
    Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: February 14, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • Oxide semiconductor film
    Patent number: 9530640
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: December 27, 2016
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Ze-Dong Gao, Yao-Wei Wei
  • OXIDE SEMICONDUCTOR FILM
    Publication number: 20160329209
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (0) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
    Type: Application
    Filed: June 24, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI
  • THIM FILM TRANSISTOR AND METHOD FOR MAKING THE SAME, THIM FILM TRANSISTOR PANEL AND DISPLAY DEVICE
    Publication number: 20160329433
    Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.
    Type: Application
    Filed: June 24, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, ZE-DONG GAO, YAO-WEI WEI