Patents by Inventor Zejun HE

Zejun HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and fabrication method thereof
    Patent number: 11322353
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including a first sub-trench region and a second sub-trench region. The method also includes forming a first mask layer over the layer to-be-etched and a second mask layer over the first mask layer, and forming a first sub-trench disposed over the first sub-trench region in the second mask layer. In addition, the method includes forming a first divided trench in the first mask layer and forming a second sub-trench disposed over the second sub-trench region in the second mask layer. Further, the method includes forming a first divided filling layer in the first divided trench, and forming a first middle trench in the first mask layer. The first divided filling layer divides the first middle trench in a second direction.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: May 3, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jisong Jin, Zejun He, Jia Ni, Yanhua Wu, Junling Pang
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20200279737
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including a first sub-trench region and a second sub-trench region. The method also includes forming a first mask layer over the layer to-be-etched and a second mask layer over the first mask layer, and forming a first sub-trench disposed over the first sub-trench region in the second mask layer. In addition, the method includes forming a first divided trench in the first mask layer and forming a second sub-trench disposed over the second sub-trench region in the second mask layer. Further, the method includes forming a first divided filling layer in the first divided trench, and forming a first middle trench in the first mask layer. The first divided filling layer divides the first middle trench in a second direction.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 3, 2020
    Inventors: Jisong JIN, Zejun HE, Jia NI, Yanhua WU, Junling PANG