Patents by Inventor Ze SHEN

Ze SHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12412006
    Abstract: A large-scale denudation depth thematic mapping method, which includes: creating a rule for arranging field work point and field work route, a sampling rule, a field observation and recording rule and a mineral processing rule of a research area. Analyzing a target mineral selected at each field work point by using a thermochronology research method and inputting analysis data into a Low-T Thermo software to perform thermal evolution history modeling and denudation depth calculation, so as to obtain a denudation depth at each of the field work points. Drawing a denudation depth isopleth map of the research area according to the denudation depth at each of the field work points; and setting a large-scale standard regional geological map of the research area as a base map. Superimposing the base map and the denudation depth isopleth map to obtain a denudation depth map of the research area.
    Type: Grant
    Filed: August 19, 2024
    Date of Patent: September 9, 2025
    Assignee: INSTITUTE OF GEOLOGY, CHINESE ACADEMY OF GEOLOGICAL SCIENCES
    Inventors: Wen Chen, Jingbo Sun, Bin Zhang, Shuangfeng Zhao, Pengfei Tian, Ruxin Ding, Ze Shen, Wen Zhang, Zhi Li, Qiuyi Du
  • Publication number: 20250146974
    Abstract: Disclosed are a method for dissolving a single-particle titanite and a method for determining an age of a single-particle titanite by (uranium-thorium)/helium dating, relating to the technical field of mineral isotope chronometry. A dissolution method exclusive to the single-particle titanite is provided. In the method for determining the age of the single-particle titanite by (uranium-thorium)/helium dating, contents of uranium, thorium, and helium are obtained by measuring a same sample, which are then substituted into a (uranium-thorium)/helium age equation to directly obtain an age value.
    Type: Application
    Filed: October 25, 2024
    Publication date: May 8, 2025
    Inventors: Wen CHEN, Qiuyi DU, Jingbo SUN, Yuntao TIAN, Ze SHEN, Bin ZHANG, Ziman GUO
  • Publication number: 20250086352
    Abstract: A large-scale denudation depth thematic mapping method, which includes: creating a rule for arranging field work point and field work route, a sampling rule, a field observation and recording rule and a mineral processing rule of a research area. Analyzing a target mineral selected at each field work point by using a thermochronology research method and inputting analysis data into a Low-T Thermo software to perform thermal evolution history modeling and denudation depth calculation, so as to obtain a denudation depth at each of the field work points. Drawing a denudation depth isopleth map of the research area according to the denudation depth at each of the field work points; and setting a large-scale standard regional geological map of the research area as a base map. Superimposing the base map and the denudation depth isopleth map to obtain a denudation depth map of the research area.
    Type: Application
    Filed: August 19, 2024
    Publication date: March 13, 2025
    Applicant: Institute Of Geology, Chinese Academy Of Geological Sciences
    Inventors: Wen CHEN, Jingbo SUN, Bin ZHANG, Shuangfeng ZHAO, Pengfei TIAN, Ruxin DING, Ze SHEN, Wen ZHANG, Zhi LI, Qiuyi DU
  • Patent number: 11018014
    Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: May 25, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Ze Shen, Tetsuo Ono, Hisao Yasunami
  • Publication number: 20160307765
    Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.
    Type: Application
    Filed: June 29, 2016
    Publication date: October 20, 2016
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Ze Shen, Tetsuo Ono, Hisao Yasunami
  • Publication number: 20150099368
    Abstract: In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF3 gas.
    Type: Application
    Filed: July 31, 2014
    Publication date: April 9, 2015
    Inventors: Ze SHEN, Tetsuo ONO, Hisao YASUNAMI