Patents by Inventor Ze-Wei Jhou
Ze-Wei Jhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11804526Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: GrantFiled: August 25, 2022Date of Patent: October 31, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Patent number: 11798998Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: GrantFiled: August 24, 2022Date of Patent: October 24, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Patent number: 11791386Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: GrantFiled: August 24, 2022Date of Patent: October 17, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Publication number: 20220406904Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: ApplicationFiled: August 25, 2022Publication date: December 22, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Publication number: 20220406902Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: ApplicationFiled: August 24, 2022Publication date: December 22, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Publication number: 20220406903Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: ApplicationFiled: August 24, 2022Publication date: December 22, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Patent number: 11462621Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: GrantFiled: March 15, 2021Date of Patent: October 4, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Publication number: 20220254888Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.Type: ApplicationFiled: March 15, 2021Publication date: August 11, 2022Inventors: Yi-Chieh Wang, Po-Chun Lai, Ke-Feng Lin, Chen-An Kuo, Ze-Wei Jhou
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Patent number: 9029932Abstract: A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the source region and the drain region; a channel coupling the source region and the drain region; a floating gate formed of a conductive material and positioned on the substrate and corresponding to the channel; and a trench formed in the diffusion region at the substrate, wherein the floating gate extends to the trench, and the conductive material covers a sidewall of the trench.Type: GrantFiled: August 27, 2013Date of Patent: May 12, 2015Assignee: United Microelectronics Corp.Inventors: Ze-Wei Jhou, Ching-Chung Yang
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Publication number: 20150060980Abstract: A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the source region and the drain region; a channel coupling the source region and the drain region; a floating gate formed of a conductive material and positioned on the substrate and corresponding to the channel; and a trench formed in the diffusion region at the substrate, wherein the floating gate extends to the trench, and the conductive material covers a sidewall of the trench.Type: ApplicationFiled: August 27, 2013Publication date: March 5, 2015Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ze-Wei Jhou, Ching-Chung Yang