Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1%) on a substrate in a processing chamber. The method begins by obtaining a reference emission curve. An etch operation is performed on a patterned substrate. A plasma optical emission intensity is measured for each of the etch cycles. A differential curve between the reference emission and the plasma optical emissions is calculated. And endpoint is determined for the etch operation on the first substrate based on an inflection point detection or other unique features through pattern recognition in the differential curve for stopping the etch of the first substrate.

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1%) on a substrate in a processing chamber. The method begins by obtaining a reference emission curve. An etch operation is performed on a patterned substrate. A plasma optical emission intensity is measured for each of the etch cycles. A differential curve between the reference emission and the plasma optical emissions is calculated. And endpoint is determined for the etch operation on the first substrate based on an inflection point detection or other unique features through pattern recognition in the differential curve for stopping the etch of the first substrate.

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1%) on a substrate in a processing chamber. The method begins by obtaining a reference emission curve. An etch operation is performed on a patterned substrate. A plasma optical emission intensity is measured for each of the etch cycles. A differential curve between the reference emission and the plasma optical emissions is calculated. And endpoint is determined for the etch operation on the first substrate based on an inflection point detection or other unique features through pattern recognition in the differential curve for stopping the etch of the first substrate.

Abstract: Provided is a method for identifying authenticity and origin of Panax quinquefolius based on terahertz spectroscopy. The time domain spectral information of the Panax quinquefolius sample is obtained, and converted into the frequency domain spectral information by Fourier transform to calculate a terahertz absorption spectrum. The identification is performed by observing whether there are characteristic absorption peaks of pseudoginsenoside F11 in the terahertz absorption spectrum.

Abstract: Provided is a method for identifying authenticity and origin of Panax quinquefolius based on terahertz spectroscopy. The time domain spectral information of the Panax quinquefolius sample is obtained, and converted into the frequency domain spectral information by Fourier transform to calculate a terahertz absorption spectrum. The identification is performed by observing whether there are characteristic absorption peaks of pseudoginsenoside F11 in the terahertz absorption spectrum.

Abstract: The disclosure describes methods, apparatuses and systems for indoor navigation. In one embodiment, a method is disclosed which comprises receiving a current location of a moving object at a current building level and a destination location at a destination building level; transmitting the current location and the destination location to a back-end device; receiving information of available cross-level tools and routes to the destination location from the back-end device, wherein the available cross-level tools comprise a plurality of available cross-level tools at the current building level, and the routes to the destination location include one or more direct or indirect routes to the destination location using the available cross-level tools; and displaying the available cross-level tools and the routes to the destination location.