Patents by Inventor Zehua Wang

Zehua Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210121798
    Abstract: The present invention provides a kind of an integrated sewage treatment equipment for paper mill, which belongs to the technical field of sewage treatment, consists of a box body, and the said box body is arranged a water injection gap on the upper part at one side, the bottom of the box body is connected with a drainage pipe, and a filter assembly is arranged inside the said box body movably, and the inner wall of the box body is equipped with a limit component which provides guidance for the movement of the filter assembly; the said filter assembly consists of several concentrically arranged annular plates, and two adjacent groups of annular plates are connected by a netting. The bottom of the annular plate is equipped with a chemical dosing component, and the inner side of the innermost annular plate is equipped with an adapter sleeve.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 29, 2021
    Inventors: Xiaofeng Jia, Yu Sun, Wei Yang, Xiangguo Li, Jianghong Huangfu, Hui Guo, Junfeng Zheng, Xiaoyu Chen, Zehua Wang, Zhanyong Ji, Yifeng Xu, Huxiang Xu, Mengqiao Yang, Qian Zheng, An Sun
  • Publication number: 20210115441
    Abstract: Methods of treating cancer are provided along with nucleic acids and nucleic acid analog sequences of a long-non-coding RNA (lncRNA), and reagents useful for knocking down the lncRNA.
    Type: Application
    Filed: February 22, 2019
    Publication date: April 22, 2021
    Inventors: Da Yang, Zehua Wang
  • Patent number: 10762051
    Abstract: A system obtains a first data chunk and a second data chunk of a plurality of data chunks associated with a first data snapshot of a computing system. A hash record is assigned to a data chunk, and used to create a hash value that is written to a first lookup table. The hash function is selected from a plurality of hash functions. The system creates a first archive by saving the plurality of data chunks and the first lookup table to a datastore. The system writes a second hash record for the individual data chunks to a second lookup table using the same hash functions that were used for the first lookup table. Dissimilar hash values between the first lookup table and the second lookup table are identified, and a second archive that includes data chunks with different data from the corresponding data chunks from the first data snapshot is created based on the data chunks with the dissimilar hash values.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: September 1, 2020
    Assignee: Amazon Technologies, Inc.
    Inventors: Ravishankar Bhagavandas, Aaron B. Fernandes, Zehua Wang, Jiabin Li, Huihui Li
  • Publication number: 20200228932
    Abstract: A method for communicating over a mesh network established between a plurality of devices is disclosed. Each device has a wireless radio and the method involves launching a mesh service on each device, the mesh service being operable to cause a processor circuit of the device to provide functionality for controlling the wireless radio for communication between devices over the mesh network. Each device has at least one application running on the device, the at least one application being associated with a mesh port, the mesh port being used to designate data transmissions as being associated with instances of a specific application running on at least some of the devices in the plurality of devices, the at least one application and the mesh service on each device being in data communication.
    Type: Application
    Filed: August 9, 2018
    Publication date: July 16, 2020
    Inventors: Jason Bruce Ernst, Zehua Wang
  • Patent number: 8598658
    Abstract: A high voltage lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOS) comprises a substrate; an epitaxy layer on the substrate; a drift region on the epitaxy layer; and a drain region and a source region at two ends. At least one pair of n-type and p-type semiconductor regions is arranged alternately above the interface of the substrate and the epitaxy layer and firmly attached to a lower surface of the drifting region; the n-type and p-type semiconductor regions are firmly closed to each other and arranged to form a lateral PN junction; and the p-type semiconductor region and the drifting region form a vertical PN junction. The n-type and p-type semiconductor regions are also totally called “a reduced surface field (RESURF) layer in body”, and the LDMOS device with a RESURF layer in body effectively solves conflict between raising reverse withstand voltage and reducing forward on-resistance of the current LDMOS devices.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: December 3, 2013
    Assignee: University of Electronic Science and Technology of China
    Inventors: Jian Fang, Lvyun Chen, Wenchang Li, Chao Guan, Qiongle Wu, Wenbin Bo, Zehua Wang
  • Publication number: 20130214355
    Abstract: A high voltage lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOS) comprises a substrate; an epitaxy layer on the substrate; a drift region on the epitaxy layer; and a drain region and a source region at two ends. At least one pair of n-type and p-type semiconductor regions is arranged alternately above the interface of the substrate and the epitaxy layer and firmly attached to a lower surface of the drifting region; the n-type and p-type semiconductor regions are firmly closed to each other and arranged to form a lateral PN junction; and the p-type semiconductor region and the drifting region form a vertical PN junction. The n-type and p-type semiconductor regions are also totally called “a reduced surface field (RESURF) layer in body”, and the LDMOS device with a RESURF layer in body effectively solves conflict between raising reverse withstand voltage and reducing forward on-resistance of the current LDMOS devices.
    Type: Application
    Filed: April 28, 2011
    Publication date: August 22, 2013
    Applicant: University of Electronic Science and Technology of China
    Inventors: Jian Fang, Lvyun Chen, Wenchang Li, Chao Guan, Qiongle Wu, Wenbin Bo, Zehua Wang