Patents by Inventor Zehuang Luo

Zehuang Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method for semiconductor device with discrete field oxide structure
    Patent number: 9252240
    Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to t
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: February 2, 2016
    Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
    Inventors: Jian Xu, Min He, Shu Zhang, Zehuang Luo, Xiaojia Wu
  • MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DISCRETE FIELD OXIDE STRUCTURE
    Publication number: 20150295069
    Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to t
    Type: Application
    Filed: December 31, 2013
    Publication date: October 15, 2015
    Inventors: Jian Xu, Min He, Shu Zhang, Zehuang Luo, Xiaojia Wu