Abstract: A wafer frontside-backside through silicon via and methods of manufacture are disclosed. The method includes forming a plurality of frontside metalized vias into a partial depth of a substrate. The method further includes forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias. The method further includes forming a metal in the via in contact with the plurality of metalized frontside vias.

Abstract: A method and structure for eliminating through silicon via poor reveal is disclosed. In one embodiment, the method includes obtaining a wafer having a front side, a back side and partially etched and metalized through silicon vias each extending from a portion of the front side through a portion of the back side, terminating before reaching an end surface of the back side. A region of the back side of the wafer is patterned and etched to expose and reveal a portion of each of the plurality of through silicon vias. A metal layer is deposited on the back side of the wafer to form a back side metallization. The metal layer covers all of the back side including the etched region of the back side and the exposed portions of each of the through silicon vias.

Abstract: A wafer frontside-backside through silicon via and methods of manufacture are disclosed. The method includes forming a plurality of frontside metalized vias into a partial depth of a substrate. The method further includes forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias. The method further includes forming a metal in the via in contact with the plurality of metalized frontside vias.

Abstract: Methods, systems, and structures for detecting residual material on semiconductor wafers are provided. A method includes scanning a test structure including topographic features on a surface of a semiconductor wafer. The method further includes determining, based on the scanning, that the test structure includes an amount of a residual material of a sacrificial layer that exceeds a predetermined threshold.

Abstract: Methods, systems, and structures for detecting residual material on semiconductor wafers are provided. A method includes scanning a test structure including topographic features on a surface of a semiconductor wafer. The method further includes determining, based on the scanning, that the test structure includes an amount of a residual material of a sacrificial layer that exceeds a predetermined threshold.

Abstract: A method and structure for eliminating through silicon via poor reveal is disclosed. In one embodiment, the method includes obtaining a wafer having a front side, a back side and partially etched and metalized through silicon vias each extending from a portion of the front side through a portion of the back side, terminating before reaching an end surface of the back side. A region of the back side of the wafer is patterned and etched to expose and reveal a portion of each of the plurality of through silicon vias. A metal layer is deposited on the back side of the wafer to form a back side metallization. The metal layer covers all of the back side including the etched region of the back side and the exposed portions of each of the through silicon vias.