Abstract: A conversational recommendation method, a method of training a conversational recommendation model, an electronic device, and a storage medium are provided, which are related to a technical field of data processing, in particular to technical fields of voice interaction, deep learning, artificial intelligence and the like. The conversational recommendation method includes: acquiring a historical conversation information; determining a target conversation object to be generated, from a conversation target graph based on the historical conversation information, the conversation target graph includes an object node, the object node is configured to represent a conversation object, and the target conversation object is determined based on the object node; and generating a target conversation information for recommendation based on the target conversation object.

Abstract: The present disclosure provides a dialog method and system, an electronic device and a storage medium, and relates to the field of artificial intelligence (AI) technologies such as deep learning and natural language processing. A specific implementation scheme involves: rewriting a corresponding dialog state based on received dialog information of a user; determining to-be-used dialog action information based on the dialog information of the user and the dialog state; and generating a reply statement based on the dialog information of the user and the dialog action information. According to the present disclosure, the to-be-used dialog action information can be determined based on the dialog information of the user and the dialog state; and then the reply statement is generated based on the dialog action information, thereby providing an efficient dialog scheme.

Abstract: Adhesion of a copper film, such as a copper interconnect, to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk copper layer under predetermined conditions that maximize throughput.

Abstract: Adhesion of a copper film, such as a copper interconnect, to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk copper layer under predetermined conditions that maximize throughput.