Abstract: A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

Abstract: A system includes a transmission unit configured to generate an electromagnetic wave, a first reception unit configured to detect the electromagnetic wave, and a processing unit configured to determine whether an output of the electromagnetic wave from the transmission unit is more than or equal to a threshold based on first image information obtained by capturing an image of the transmission unit in a state where the transmission unit is irradiating the electromagnetic wave.

Abstract: A detector includes a substrate and an insulating film formed over a main surface of the substrate. The substrate includes a conversion element portion and an insulator region disposed in a recess portion of the main surface. The conversion element portion includes a first semiconductor region that is formed on the main surface and is of a first conductivity type, a second semiconductor region that is formed on the main surface and is of a second conductivity type, and a third semiconductor region that is formed under the first semiconductor region and the second semiconductor region and is of the first conductivity type. In a plan view with respect to the main surface, the insulator region is located between the first semiconductor region and the second semiconductor region in at least one direction.

Abstract: A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

Abstract: A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Abstract: A system includes a transmission unit configured to generate an electromagnetic wave, a first reception unit configured to detect the electromagnetic wave, and a processing unit configured to determine whether an output of the electromagnetic wave from the transmission unit is more than or equal to a threshold based on first image information obtained by capturing an image of the transmission unit in a state where the transmission unit is irradiating the electromagnetic wave.

Abstract: A system includes a transmission unit configured to generate an electromagnetic wave, a first reception unit configured to detect the electromagnetic wave, and a processing unit configured to determine whether an output of the electromagnetic wave from the transmission unit is more than or equal to a threshold based on first image information obtained by capturing an image of the transmission unit in a state where the transmission unit is irradiating the electromagnetic wave.

Abstract: A system includes a transmission unit configured to generate an electromagnetic wave, a first reception unit configured to detect the electromagnetic wave, and a processing unit configured to determine whether an output of the electromagnetic wave from the transmission unit is more than or equal to a threshold based on first image information obtained by capturing an image of the transmission unit in a state where the transmission unit is irradiating the electromagnetic wave.

Abstract: An optical element array includes a plurality of optical elements arranged along a first direction and a second direction. A first optical element is included at a position distanced from a center of the optical element array by a first distance. The first optical element has a first width, a first height, and a first curvature radius at the first position, and a second width, a second height, and a second curvature radius at a second position. The first width is wider than the second width, the first height is higher than the second height, and the first curvature radius is smaller than the second curvature radius. The first position and the second position are taken along a single direction.

Abstract: An optical element array includes a plurality of optical elements arranged along a first direction and a second direction. A first optical element is included at a position distanced from a center of the optical element array by a first distance. The first optical element has a first width, a first height, and a first curvature radius at the first position, and a second width, a second height, and a second curvature radius at a second position. The first width is wider than the second width, the first height is higher than the second height, and the first curvature radius is smaller than the second curvature radius. The first position and the second position are taken along a single direction.

Abstract: A solid-state imaging apparatus having a sensitivity difference between microlens regions hardly be recognized comprises: a plurality of pixels each of which has a photoelectric conversion portion, an optical element arranged above the photoelectric conversion portion, and a microlens arranged above the optical element, wherein the microlenses of the plurality of pixels include a plurality of microlenses of a first microlens structure arranged in a first microlens region, and a plurality of microlenses of a second microlens structure arranged in a second microlens region, the optical elements of the plurality of pixels include a plurality of optical elements of a first optical element structure arranged in a first optical element region, and a plurality of optical elements of a second optical element structure arranged in a second optical element region, and the first microlens region is arranged above a boundary between the first and second optical element regions.

Abstract: An optical element array includes a plurality of optical elements arranged along a first direction and a second direction. A first optical element is included at a position distanced from a center of the optical element array by a first distance. The first optical element has a first width, a first height, and a first curvature radius at the first position, and a second width, a second height, and a second curvature radius at a second position. The first width is wider than the second width, the first height is higher than the second height, and the first curvature radius is smaller than the second curvature radius. The first position and the second position are taken along a single direction.

Abstract: An optical element array includes a plurality of optical elements arranged along a first direction and a second direction. A first optical element is included at a position distanced from a center of the optical element array by a first distance. The first optical element has a first width, a first height, and a first curvature radius at the first position, and a second width, a second height, and a second curvature radius at a second position. The first width is wider than the second width, the first height is higher than the second height, and the first curvature radius is smaller than the second curvature radius. The first position and the second position are taken along a single direction.