Abstract: The semiconductor structure includes a substrate; a dielectric layer formed on the substrate; an opening, formed through the dielectric layer; a contact layer formed at bottom of the opening; a blocking layer formed on a sidewall surface of the opening; and a plug formed in the opening. The plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.

Abstract: The semiconductor structure includes a substrate; a dielectric layer formed on the substrate; an opening, formed through the dielectric layer; a contact layer formed at bottom of the opening; a blocking layer formed on a sidewall surface of the opening; and a plug formed in the opening. The plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.

Abstract: A method for forming a semiconductor structure includes forming a dielectric layer with an opening on a substrate; forming a material film in the opening; forming a blocking film on the material film; and removing the blocking film at the bottom of the opening to expose the material film. The remaining blocking film forms an initial blocking layer. The method further includes forming a conductive-material film in the opening; performing an annealing process to form a contact layer at the bottom of the opening by making the substrate, the material film, and the conductive-material film react with each other; and planarizing the conductive-material film, the initial blocking layer, and the material film to expose the dielectric layer. The remaining initial blocking layer forms a blocking layer in the opening; and the remaining conductive-material film forms a plug in contact with the blocking layer and the contact layer.

Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate and forming an interlayer dielectric layer on the substrate. The method also includes forming a contact hole exposing a portion of the surface of the substrate by etching the interlayer dielectric layer. In addition, the method includes forming an adhesion layer at a bottom and on a sidewall of the contact hole, and forming a metal seed layer at a bottom and on a sidewall of the adhesion layer by a selective growth method. Further, the method includes forming a metal layer filling the contact hole on the metal seed layer.

Abstract: A method for forming a semiconductor structure includes forming a dielectric layer with an opening on a substrate; forming a material film in the opening; forming a blocking film on the material film; and removing the blocking film at the bottom of the opening to expose the material film. The remaining blocking film forms an initial blocking layer. The method further includes forming a conductive-material film in the opening; performing an annealing process to form a contact layer at the bottom of the opening by making the substrate, the material film, and the conductive-material film react with each other; and planarizing the conductive-material film, the initial blocking layer, and the material film to expose the dielectric layer. The remaining initial blocking layer forms a blocking layer in the opening; and the remaining conductive-material film forms a plug in contact with the blocking layer and the contact layer.