Patents by Inventor Zengwei Ge

Zengwei Ge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8480996
    Abstract: A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10?13 g/g.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: July 9, 2013
    Assignees: Research and Development Center, Shanghai Institute of Ceramics, Shanghai Institute of Ceramics, Chinese Academy of Sciences
    Inventors: Zengwei Ge, Yong Zhu, Guoging Wu, Xueji Yin, Linyao Tang, Hanbin Zhao, Lizhen Gu
  • Publication number: 20120070366
    Abstract: A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10?13 g/g.
    Type: Application
    Filed: April 2, 2010
    Publication date: March 22, 2012
    Inventors: Zengwei Ge, Yong Zhu, Guoging Wu, Xueji Yin, Linyao Tang, Hanbin Zhao, Lizhen Gu