Patents by Inventor Zenya Yasuda
Zenya Yasuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7255784Abstract: A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.Type: GrantFiled: October 27, 2003Date of Patent: August 14, 2007Assignee: Sony CorporationInventors: Shuzo Sato, Takeshi Nogami, Zenya Yasuda, Masao Ishihara
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Patent number: 7186322Abstract: A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper filmType: GrantFiled: December 26, 2002Date of Patent: March 6, 2007Assignee: Sony CorporationInventors: Shuzo Sato, Yuji Segawa, Akira Yoshio, Hiizu Ootorii, Zenya Yasuda, Masao Ishihara, Takeshi Nogami, Naoki Komai
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Patent number: 7156975Abstract: A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.Type: GrantFiled: November 26, 2002Date of Patent: January 2, 2007Assignee: Sony CorporationInventors: Shuzo Sato, Takeshi Nogami, Zenya Yasuda, Masao Ishihara
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Publication number: 20050082165Abstract: The electrochemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electrochemical machining apparatus performs electrochemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.Type: ApplicationFiled: November 8, 2004Publication date: April 21, 2005Inventors: Shuzo Sato, Zenya Yasuda, Masao Ishihara, Hiizu Ootorii, Takeshi Nogami, Naoki Komai
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Patent number: 6846227Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.Type: GrantFiled: February 28, 2002Date of Patent: January 25, 2005Assignee: Sony CorporationInventors: Shuzo Sato, Zenya Yasuda, Masao Ishihara, Hiizu Ootorii, Takeshi Nogami, Naoki Komai
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Publication number: 20040188244Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.Type: ApplicationFiled: April 6, 2004Publication date: September 30, 2004Inventors: Shuzo Sato, Zenya Yasuda, Masao Ishihara, Hiizu Ootorii, Takeshi Nogami, Naoki Komai
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Patent number: 6797623Abstract: A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper filmType: GrantFiled: March 8, 2001Date of Patent: September 28, 2004Assignee: Sony CorporationInventors: Shuzo Sato, Yuji Segawa, Akira Yoshio, Hiizu Ootorii, Zenya Yasuda, Masao Ishihara, Takeshi Nogami, Naoki Komai
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Publication number: 20040149592Abstract: Disclosed herein is an electropolishing apparatus including a polishing surface plate including a cathode and disposed turnably, a polishing pad disposed on the polishing surface plate, to be impregnated with an electropolishing liquid, and showing electric conduction from the face side to the back side thereof in the state of being impregnated with the electropolishing liquid, a substrate holding unit for holding a work substrate with a work surface of the work substrate opposed to a polishing surface of the polishing pad, the substrate holding unit turnably disposed at a position opposed to the polishing pad, an anode brought into contact with the work surface of the work substrate held by the substrate holding unit, a chemical liquid supply unit for supplying a chemical liquid used for polishing onto the polishing pad, and a power source for supplying electric power between the cathode and the anode.Type: ApplicationFiled: January 22, 2004Publication date: August 5, 2004Applicant: Sony CorporationInventors: Naoki Komai, Zenya Yasuda, Shuzo Sato
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Publication number: 20040137161Abstract: An electroless plating apparatus controlling the changes in the plating solution along with the elapse of time for performing electroless plating uniformly with a good accuracy and a method thereof are provided. An electroless plating apparatus for applying electroless treatment to a target surface under an atmosphere of a predetermined gas so as to form a conductive film, has a plating tank 21 set so that a target surface of a target object W is close to its inside surface and isolating the target surface from the outside atmosphere, and a plating solution feeding means 26 for feeding a plating solution to the target surface so as to ease the impact of the plating solution on the target surface of the target object W.Type: ApplicationFiled: March 8, 2004Publication date: July 15, 2004Inventors: Yuji Segawa, Shuzo Sato, Zenya Yasuda, Masao Ishihara, Takeshi Nogami
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Publication number: 20040104128Abstract: A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.Type: ApplicationFiled: October 27, 2003Publication date: June 3, 2004Inventors: Shuzo Sato, Takeshi Nogami, Zenya Yasuda, Masao Ishihara
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Publication number: 20030114004Abstract: A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper filmType: ApplicationFiled: December 26, 2002Publication date: June 19, 2003Inventors: Shuzo Sato, Yuji Segawa, Akira Yoshio, Hiizu Ootorii, Zenya Yasuda, Masao Ishihara, Takeshi Nogami, Naoki Komai
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Publication number: 20030104762Abstract: A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.Type: ApplicationFiled: November 26, 2002Publication date: June 5, 2003Inventors: Shuzo Sato, Takeshi Nogami, Zenya Yasuda, Masao Ishihara
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Publication number: 20020160698Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.Type: ApplicationFiled: February 28, 2002Publication date: October 31, 2002Inventors: Shuzo Sato, Zenya Yasuda, Masao Ishihara, Hiizu Ootorii, Takeshi Nogami, Naoki Komai
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Publication number: 20010036746Abstract: A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper filmType: ApplicationFiled: March 8, 2001Publication date: November 1, 2001Inventors: Shuzo Sato, Yuji Segawa, Akira Yoshio, Hiizu Ootorii, Zenya Yasuda, Masao Ishihara, Takeshi Nogami, Naoki Komai