Patents by Inventor Zenzou Shingu

Zenzou Shingu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss
    Patent number: 6703678
    Abstract: A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the channel layer and the field plate, the distance between the Schottky contact and the drain and the length of the field plate falls within the range of 300 nanometers to 600 nanometers thick, the range from 800 nanometers to 3000 nanometers long and the range of the distance between the Schottky contact and the drain is plus or minus 400 nanometers, respectively, so that the distortion and the return-loss are improved without sacrifice of the withstanding voltage.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: March 9, 2004
    Assignee: NEC Compound Semiconductor Devices, Ltd.
    Inventors: Tomoaki Hirokawa, Zenzou Shingu, Shigeru Saitou
  • Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss
    Publication number: 20020043697
    Abstract: A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, wherein the thickness of the dielectric layer between the channel layer and the field plate, the distance between the Schottky contact and the drain and the length of the field plate are to be fallen within the range between 300 nanometers thick to 600 nanometers thick, the range from 800 nanometers long to 3000 nanometers long and the range between the distance between the Schottky contact and the drain plus minus 400 nanometers, respectively, so that the distortion and the return-loss are improved without sacrifice of the withstanding voltage.
    Type: Application
    Filed: September 28, 2001
    Publication date: April 18, 2002
    Applicant: NEC CORPORATION
    Inventors: Tomoaki Hirokawa, Zenzou Shingu, Shigeru Saitou