Patents by Inventor Zer Liang
Zer Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11468923Abstract: Apparatuses, mufti-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: GrantFiled: July 8, 2020Date of Patent: October 11, 2022Assignee: Micron Technology, Inc.Inventors: Tsugio Takahashi, Zer Liang
-
Patent number: 11373725Abstract: Error correction control (ECC) circuits for memory devices and related apparatuses, systems, and methods are disclosed. An apparatus includes an ECC control circuit input configured to receive read data from a plurality of memory banks of a memory cell array via a single set of shared main input/output (MIO) lines. The single set of shared MIO lines are shared by the plurality of memory banks. The apparatus also includes a single ECC control circuit configured to generate corrected read data responsive to the read data received by the ECC control circuit input. The apparatus further includes an ECC control circuit output configured to provide the corrected read data generated by the single ECC control circuit to a global data bus.Type: GrantFiled: June 25, 2020Date of Patent: June 28, 2022Assignee: Micron Technology, Inc.Inventors: Zer Liang, Minari Arai, Takuya Nakanishi
-
Publication number: 20210407611Abstract: Error correction control (ECC) circuits for memory devices and related apparatuses, systems, and methods are disclosed. An apparatus includes an ECC control circuit input configured to receive read data from a plurality of memory banks of a memory cell array via a single set of shared main input/output (MIO) lines. The single set of shared MIO lines are shared by the plurality of memory banks. The apparatus also includes a single ECC control circuit configured to generate corrected read data responsive to the read data received by the ECC control circuit input. The apparatus further includes an ECC control circuit output configured to provide the corrected read data generated by the single ECC control circuit to a global data bus.Type: ApplicationFiled: June 25, 2020Publication date: December 30, 2021Inventors: Zer Liang, Minari Arai, Takuya Nakanishi
-
Publication number: 20200342920Abstract: Apparatuses, mufti-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: ApplicationFiled: July 8, 2020Publication date: October 29, 2020Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsugio Takahashi, Zer Liang
-
Patent number: 10748584Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: GrantFiled: September 19, 2018Date of Patent: August 18, 2020Assignee: Micron Technology, Inc.Inventors: Tsugio Takahashi, Zer Liang
-
Publication number: 20190035439Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory; and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: ApplicationFiled: September 19, 2018Publication date: January 31, 2019Applicant: MICRON TECHNOLOGY, INC.Inventors: TSUGIO TAKAHASHI, Zer Liang
-
Patent number: 10109327Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: GrantFiled: June 19, 2017Date of Patent: October 23, 2018Assignee: Micron Technology, Inc.Inventors: Tsugio Takahashi, Zer Liang
-
Publication number: 20170287531Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: ApplicationFiled: June 19, 2017Publication date: October 5, 2017Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsugio Takahashi, Zer Liang
-
Patent number: 9715909Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configure d to delay receipt of the column control signals to the memory.Type: GrantFiled: March 14, 2013Date of Patent: July 25, 2017Assignee: Micron Technology, Inc.Inventors: Tsugio Takahashi, Zer Liang
-
Patent number: 9466348Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. Chip enable circuits having control logic are configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.Type: GrantFiled: December 10, 2014Date of Patent: October 11, 2016Assignee: Micron Technology, Inc.Inventors: Jacob Robert Anderson, Kang-Yong Kim, Tadashi Yamamoto, Zer Liang, Huy Vo
-
Patent number: 9059053Abstract: A multi-die stack structure including N dies stacked vertically is described. N is an integer larger than or equal to 2. Each die includes N die-specific input pads, wherein a specific pad among the N pads is for the input of the die. The specific pad of each die above the bottom die is electrically connected with a different pad of the bottom die other than the specific pad of the bottom die, via at least one TSV and, when not being in the die neighboring to the bottom die, also via a different pad of each underlying die above the bottom die. The specific pad of the bottom die is electrically connected with at least one pad of the overlying die(s) that is not the specific pad of any overlying die and not any pad electrically connected with the specific pad of any overlying die.Type: GrantFiled: October 3, 2013Date of Patent: June 16, 2015Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Zer Liang, Kotaro Suzuki
-
Publication number: 20150097296Abstract: A multi-die stack structure including N dies stacked vertically is described. N is an integer larger than or equal to 2. Each die includes N die-specific input pads, wherein a specific pad among the N pads is for the input of the die. The specific pad of each die above the bottom die is electrically connected with a different pad of the bottom die other than the specific pad of the bottom die, via at least one TSV and, when not being in the die neighboring to the bottom die, also via a different pad of each underlying die above the bottom die. The specific pad of the bottom die is electrically connected with at least one pad of the overlying die(s) that is not the specific pad of any overlying die and not any pad electrically connected with the specific pad of any overlying die.Type: ApplicationFiled: October 3, 2013Publication date: April 9, 2015Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Zer Liang, Kotaro Suzuki
-
Publication number: 20150092503Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. Chip enable circuits having control logic are configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.Type: ApplicationFiled: December 10, 2014Publication date: April 2, 2015Inventors: JACOB ROBERT ANDERSON, KANG-YONG KIM, TADASHI YAMAMOTO, ZER LIANG, HUY VO
-
Patent number: 8913447Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. The memory further may include chip enable circuits having control logic configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.Type: GrantFiled: June 24, 2011Date of Patent: December 16, 2014Assignee: Micron Technology, Inc.Inventors: Jacob Robert Anderson, Kang-Yong Kim, Tadashi Yamamoto, Zer Liang, Huy Vo
-
Publication number: 20140269121Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: Micron Technology, Inc.Inventors: Tsugio Takahashi, Zer Liang
-
Patent number: 8520452Abstract: In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system.Type: GrantFiled: May 22, 2012Date of Patent: August 27, 2013Assignee: Micron Technology, Inc.Inventors: Takuya Nakanishi, Zer Liang
-
Publication number: 20120327728Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. The memory further may include chip enable circuits having control logic configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.Type: ApplicationFiled: June 24, 2011Publication date: December 27, 2012Applicant: Micron Technology, Inc.Inventors: Jacob Robert Anderson, Kang-Yong Kim, Tadashi Yamamoto, Zer Liang, Huy Vo
-
Publication number: 20120230121Abstract: In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system.Type: ApplicationFiled: May 22, 2012Publication date: September 13, 2012Applicant: Micron Technoloy, Inc.Inventors: Takuya Nakanishi, Zer Liang
-
Patent number: 8194474Abstract: In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system.Type: GrantFiled: July 29, 2011Date of Patent: June 5, 2012Assignee: Micron Technology, Inc.Inventors: Takuya Nakanishi, Zer Liang
-
Publication number: 20110280089Abstract: In one or more of the disclosed embodiments, the number of times toggle operations of a data bus are performed at the time of a data transmission in a semiconductor storage apparatus is reduced, thereby reducing the power consumption. For example, a semiconductor storage apparatus according to one embodiment of the present invention comprises a DRF bus, a DR11F bus, a GDRF bus and a GDR11F bus. The DRF bus and DR11F bus, and the GDRF bus and GDR11F bus, are placed in parallel for the purpose of reducing the number of times toggle operations of a data bus are performed at the time of a data transmission. The DR11F bus is added to make the DRF11F bus perform a toggle operation only when the DRF buses on both sides are made to perform a toggle operation if the data transmission were performed in a conventional system.Type: ApplicationFiled: July 29, 2011Publication date: November 17, 2011Applicant: Micron Technology, Inc.Inventors: Takuya Nakanishi, Zer Liang