Abstract: Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes.

Abstract: Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes.