Patents by Inventor Ze Xiang Shen

Ze Xiang Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to form C54 TiSi2 for IC device fabrication
    Patent number: 6777329
    Abstract: A novel method for forming a C54 phase titanium disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A titanium layer is deposited overlying the silicon regions to be silicided. The substrate is subjected to a first annealing whereby the titanium is transformed to phase C40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted. The unreacted titanium layer is removed. The substrate is subjected to a second annealing whereby the phase C40 titanium disilicide is transformed to phase C54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit.
    Type: Grant
    Filed: April 20, 2001
    Date of Patent: August 17, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd
    Inventors: Shaoyin Chen, Ze Xiang Shen, Alex See, Lap Chan
  • Apertureless near-field scanning raman microscopy using reflection scattering geometry
    Patent number: 6643012
    Abstract: An apertureless near-field scanning Raman microscope using reflection geometry. A laser beam focused to a small spot size on a sample onto which a silver coated metal probe is positioned. With this arrangement, it is possible to obtain enhanced near-field spectroscopy using reflection geometry. Near-field spectroscopic mapping can be done in a short time without extensive sample preparation.
    Type: Grant
    Filed: February 21, 2002
    Date of Patent: November 4, 2003
    Assignee: National University of Singapore
    Inventors: Ze Xiang Shen, Wanxin Sun
  • Apertureless near-field scanning raman microscopy using reflection scattering geometry
    Publication number: 20020154301
    Abstract: An apertureless near-field scanning Raman microscope using reflection geometry. A laser beam focused to a small spot size on a sample onto which a silver coated metal probe is positioned. With this arrangement, it is possible to obtain enhanced near-field spectroscopy using reflection geometry. Near-field spectroscopic mapping can be done in a short time without extensive sample preparation.
    Type: Application
    Filed: February 21, 2002
    Publication date: October 24, 2002
    Inventors: Ze Xiang Shen, Wanxin Sun
  • Novel method to form C54 TiSi2 for IC device fabrication
    Publication number: 20020155703
    Abstract: A novel method for forming a C54 phase titanium disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A titanium layer is deposited overlying the silicon regions to be silicided. The substrate is subjected to a first annealing whereby the titanium is transformed to phase C40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted. The unreacted titanium layer is removed. The substrate is subjected to a second annealing whereby the phase C40 titanium disilicide is transformed to phase C54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit.
    Type: Application
    Filed: April 20, 2001
    Publication date: October 24, 2002
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Shaoyin Chen, Ze Xiang Shen, Alex See, Lap Chan