Patents by Inventor Zeying Ren
Zeying Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11908704Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 1, 2022Date of Patent: February 20, 2024Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, Fnu Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Patent number: 11894417Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 3, 2022Date of Patent: February 6, 2024Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Patent number: 11769790Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 1, 2022Date of Patent: September 26, 2023Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, Fnu Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Publication number: 20230298905Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 1, 2022Publication date: September 21, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Publication number: 20230246064Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 3, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Publication number: 20230246063Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 1, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Publication number: 20230246062Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: January 31, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
-
Patent number: 10608180Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.Type: GrantFiled: August 14, 2017Date of Patent: March 31, 2020Assignee: CROSSBAR, INC.Inventors: Sung Hyun Jo, Xianliang Liu, Xu Zhao, Zeying Ren, FNU Atiquzzaman, Joanna Bettinger, Fengchiao Joyce Lin
-
Patent number: 10134984Abstract: Providing an electrode for a two-terminal memory device is described herein. By way of example, the electrode can comprise a contact surface that comprises at least one surface discontinuity. For instance, the electrode can have a gap, break, or other discontinuous portion of a surface that makes electrical contact with another component of the two-terminal memory device. In one example, the contact surface can comprise an annulus or an approximation of an annulus, having a discontinuity within a center of the annulus, for instance. In some embodiments, a disclosed electrode can be formed from a conductive layer deposited over a non-continuous surface formed by a via or trench in an insulator, or over a pillar device formed from or on the insulator.Type: GrantFiled: December 31, 2014Date of Patent: November 20, 2018Assignee: CROSSBAR, INC.Inventors: Sung Hyun Jo, Joanna Bettinger, Xianliang Liu, Zeying Ren, Xu Zhao, Fnu Atiquzzaman
-
Publication number: 20180062075Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.Type: ApplicationFiled: August 14, 2017Publication date: March 1, 2018Inventors: Sung Hyun Jo, Xianliang Liu, Xu Zhao, Zeying Ren, FNU Atiquzzaman, Joanna Bettinger, Fengchiao Joyce Lin
-
Patent number: 9735357Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.Type: GrantFiled: February 1, 2016Date of Patent: August 15, 2017Assignee: CROSSBAR, INC.Inventors: Sung Hyun Jo, Xianliang Liu, Xu Zhao, Zeying Ren, Fnu Atiquzzaman, Joanna Bettinger, Fengchiao Joyce Lin
-
Publication number: 20160225824Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.Type: ApplicationFiled: February 1, 2016Publication date: August 4, 2016Inventors: Sung Hyun Jo, Xianliang Liu, Xu Zhao, Zeying Ren, FNU Atiquzzaman, Joanna Bettinger, Fengchiao Joyce Lin