Patents by Inventor ZEYNEP DILLI
ZEYNEP DILLI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11823899Abstract: A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.Type: GrantFiled: April 15, 2021Date of Patent: November 21, 2023Assignee: CoolCAD Electronics, LLCInventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Mitchell Adrian Gross, Aysanew Abate
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Patent number: 11798938Abstract: A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.Type: GrantFiled: November 23, 2021Date of Patent: October 24, 2023Assignee: CoolCAD Electronics, LLCInventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Mitchell Adrian Gross, Usama Khalid, Christopher James Darmody
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Publication number: 20220115373Abstract: A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.Type: ApplicationFiled: November 23, 2021Publication date: April 14, 2022Applicant: CoolCAD Electronics, LLCInventors: Neil GOLDSMAN, Akin AKTURK, Zeynep DILLI, Mitchell Adrian GROSS, Usama KHALID, Christopher James DARMODY
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Publication number: 20220115502Abstract: Fabrication method for a SiC integrated circuit which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.Type: ApplicationFiled: November 23, 2021Publication date: April 14, 2022Applicant: CoolCAD Electronics, LLCInventors: Neil GOLDSMAN, Akin AKTURK, Zeynep DILLI, Mitchell Adrian GROSS, Usama KHALID, Christopher James DARMODY
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Patent number: 10910414Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.Type: GrantFiled: August 11, 2020Date of Patent: February 2, 2021Assignee: CoolCAD Electronics, LLCInventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
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Patent number: 10763284Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.Type: GrantFiled: September 25, 2019Date of Patent: September 1, 2020Assignee: CoolCAD Electronics, LLCInventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
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Patent number: 10446592Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.Type: GrantFiled: November 6, 2017Date of Patent: October 15, 2019Assignee: CoolCAD Electronics, LLCInventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
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Patent number: 9627694Abstract: Systems for batteries or galvanic cells are disclosed. The system comprises a mixing chamber. The system further comprises a first reservoir, in fluid communication with a mixing chamber, the first reservoir configured to store a concentrated electrolyte. Additionally the system comprises a pump configured to pump a fluid into the mixing chamber. The system further comprises an electrochemical energy cell in fluid communication with the mixing chamber wherein the mixing chamber is configured to receive the fluid and concentrated electrolyte and mix the fluid and the concentrated electrolyte to produce a diluted electrolyte. Finally the system comprises the electrochemical energy cell configured to receive the diluted electrolyte, use the received diluted electrolyte for an electrochemical reaction and remove the used electrolyte solution from the cell.Type: GrantFiled: November 1, 2012Date of Patent: April 18, 2017Assignee: FLEXEL, LLCInventors: Mahsa Dornajafi, Robert Benjamin Proctor, Daniel A. Lowy, Zeynep Dilli, Martin C. Peckerar
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Patent number: 9484155Abstract: A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The energy cell may have a voltage at or below 1.25V for recharging. The thickness 15 of the cell structure can be in the range of 0.5 mm-1 mm, or lower.Type: GrantFiled: July 20, 2009Date of Patent: November 1, 2016Assignees: University of Maryland, National Security AgencyInventors: Martin C. Peckerar, Neil Goldsman, Yves Ngu, Zeynep Dilli, George M. Metze
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Publication number: 20130089769Abstract: An electrochemical energy cell has a galvanic cell including an anode electrode unit, a cathode electrode unit, an electrolyte body between the anode and cathode electrode units and contacting both the anode and cathode electrode units, and a separator layer including the electrolyte body and placed within the cell to contact both the anode and cathode electrode units to bring the anode and cathode electrode units in contact with the electrolyte body. The cathode electrode unit includes a cathode material including a powder mixture of a powder of hydrated ruthenium oxide and one or more additives. The anode electrode unit includes a structure formed of an oxidizable metal, and the separator layer includes a material that is porous to ions in liquid and is electrically non-conductive. A flexible electrochemical cell can be configured for a reduction-oxidation reaction to generate power at a surface of the electrode unit(s).Type: ApplicationFiled: April 28, 2011Publication date: April 11, 2013Applicant: FlexEL, LLCInventors: Robert Benjamin Proctor, Martin C. Peckerar, Zeynep Dilli, Mahsa Dornajafi, Daniel Lowy
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Publication number: 20110101789Abstract: Provided is an RF power harvesting circuit with improved sensitivity to RF energy. The RF power harvesting device includes an inductor, a first capacitor connected to the inductor, a first MOSFET connected to a first node, and a second MOSFET connected to the first node. The inductor or the first capacitor are connected to the first node.Type: ApplicationFiled: December 1, 2009Publication date: May 5, 2011Inventors: Thomas Steven Salter, JR., George M. Metze, Neil Goldsman, Kwangsik Choi, Yves Ngu, Zeynep Dilli, Martin Peckerar, Li Bo
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Publication number: 20100028766Abstract: A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The materials used in the energy cell can be explosive-free, nonflammable, nontoxic, and environmentally safe, and the energy cell may have a voltage at or below 1.25V for recharging. The thickness of the cell structure can be in the range of 0.5 mm-1 mm, or lower.Type: ApplicationFiled: July 20, 2009Publication date: February 4, 2010Applicant: UNIVERSITY OF MARYLANDInventors: MARTIN C. PECKERAR, NEIL GOLDSMAN, YVES NGU, ZEYNEP DILLI, GEORGE M. METZE