Abstract: The invention discloses a device for condensate water recovery and atomization to cool the condenser of a household split air conditioner. Includes: an air conditioner outdoor unit with a drain pipe at the bottom and a condensed water storage tank on top, connected to a condensed water inlet pipe; A filter unit is in the storage tank; The condenser is inside the outdoor unit, with an atomization unit installed directly opposite it. The atomization unit is connected to the storage tank, and a temperature sensing unit is on the condenser. The condensate water inlet pipe connects to the outdoor unit's water pipe. The atomization unit uses purified condensate to cool the condenser in stages, avoiding poor refrigeration and increased compressor power consumption due to high condenser temperature.

Abstract: In one aspect, the present application provides a dental imaging device, it comprises: a base, an elongated light blocking housing, a retractor and an attachment mechanism, wherein the elongated light blocking housing is mounted on a first side of the base and defines a channel, the retractor is for opening a user's lips and is provided on a first end away from the base of the elongated light blocking housing, the attachment mechanism is mounted on a second side opposite to the first side of the base for securing an image capturing device so that the image capturing device is able to capture images of the user's teeth, which are exposed by opening the user's lips with the retractor, through the channel, the elongated light blocking housing is mounted on a rectilinear rail on the base and its position along the rectilinear rail is adjustable.

Abstract: The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Abstract: A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Abstract: A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: A method for preparing a metal-dielectric strip array based super-resolution lens includes: performing lithography on a first material layer on a first substrate to obtain a grating structure; alternately depositing second and third material layers until the grating structure is filled up, to obtain a first transition structure, one of the second and third material layers being of metal, and the other one being of dielectric; performing planarization on the first transition structure at least reach the top of the grating structure, to obtain a second transition structure; adhering an upper surface of the second transition structure to a second substrate; removing the first substrate, and performing overturning to make the second transition structure be on the second substrate to obtain a third transition structure; and performing planarization again to at least reach the top of finally deposited second or third material layer, to obtain the super-resolution lens.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: A photoresist composition is provided, including a chemical amplification matrix, wherein the chemical amplification matrix includes a polymer resin, a photoacid generator and a solvent; and a dissolution inhibitor, which is a small molecular material containing a diazo naphthoquinone structure. A method for using the photoresist composition is further provided.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Abstract: The present disclosure provides a mask topology optimization method for surface plasmon near-field photolithography, comprising: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: A method for preparing a super-resolution lens based on a metal-dielectric strip array, the method comprising: performing lithography on a first material layer (3) on a first substrate (1) to obtain a grating structure (S1); alternately depositing a second material layer (5) and a third material layer (6) until the grating structure is filled up and becomes even, so as to obtain a first transition structure, wherein one of the second material layer (5) and the third material layer (6) is metal, and the other one is dielectrics (S2); performing planarization on the first transition structure, wherein the planarization depth at least reaches the top of the grating structure, so as to obtain a second transition structure (S3); curing an upper surface of the second transition structure and a second substrate (9) (S4); removing the first substrate (1), so as to transfer the second transition structure onto the second substrate (9) to obtain a third transition structure (S5); and performing planarization again, whe

Abstract: Disclosed herein are systems, methods, and computer-program product to directly estimate subsurface properties from seismic data acquired on the surface or in the well bore hole without user provided specific starting models using full waveform inversion (FWI) techniques. The inversion result provides accurate subsurface properties estimation and such estimation is independent to the starting model.

Abstract: In one aspect, the present application provides a dental imaging device, it comprises: a base, an elongated light blocking housing, a retractor and an attachment mechanism, wherein the elongated light blocking housing is mounted on a first side of the base and defines a channel, the retractor is for opening a user's lips and is provided on a first end away from the base of the elongated light blocking housing, the attachment mechanism is mounted on a second side opposite to the first side of the base for securing an image capturing device so that the image capturing device is able to capture images of the user's teeth, which are exposed by opening the user's lips with the retractor, through the channel, the elongated light blocking housing is mounted on a rectilinear rail on the base and its position along the rectilinear rail is adjustable.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: The present disclosure provides a secondary imaging optical lithography method and apparatus.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: Systems and methods disclosed relate to generating training data. In one embodiment, the disclosure relates to systems and methods for generating training data to train a neural network to detect and classify objects. A simulator obtains 3D models of objects, and simulates 3D environments comprising the objects using physics-based simulations. The simulations may include applying real-world physical conditions, such as gravity, friction, and the like on the objects. The system may generate images of the simulations, and use the images to train a neural network to detect and classify the objects from images.

Abstract: The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber (101), an etching reaction chamber (102), a transition chamber (103), and an etching ion generation chamber (104). By moving a sample holder (111) among the injection chamber (100), the etching reaction chamber (102) and the transition chamber (103) in a scanning direction, a scanning etching is performed on a sample (100) placed on the sample holder (111), which may realize a large-area, uniform and efficient etching.

Abstract: A system and method are provided for creating and evaluating computational models for games (e.g., individual or team sports games, etc.), team performance, and individual player performance evaluation. The method comprises obtaining data associated with the team game, the information comprising at least one individual player activity, at least one team activity, at least one game event, and a location in space and time for each of the events and activities; generating quantitative values for the data associated with the team game; and evaluating either or both an individual player and a team using the quantitative values.