Abstract: A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.

Abstract: A film forming method includes the following (A) to (D). (A) Preparing a substrate having a first region in which a metal film is exposed and a second region in which an insulating film is exposed. (B) Supplying an organic compound, which is represented by Chemical Formula (1) described in the specification, to the substrate, the organic compound containing a triple bond between a carbon atom and a nitrogen atom in a head group and containing a double bond or triple bond between carbon atoms in a chain. (C) Selectively adsorbing the organic compound to the first region among the first region and the second region. (D) Polymerizing adjacent chains of the organic compound, thereby forming a polymer film in the first region.

Abstract: A film forming method includes: preparing a substrate that includes a base substrate and a first conductive film that is formed on the base substrate; forming, on the first conductive film, a composite layer that includes layers of graphene and includes, as dopant atoms, a transition metal from 4th period to 6th period in a periodic table, excluding lanthanoids, between the layers of graphene; and forming, on the composite layer, a second conductive film which is electrically connected to the first conductive film via the composite layer.

Abstract: A film forming method includes preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed, supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) described in the specification, causing the organic compound to be selectively adsorbed in the first region among the first region and the second region, and cleaving the triple bond in the first region and forming a hydrophobic film having a honeycomb structure of carbon atoms through polymerization.

Abstract: A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiCl4 gas to a substrate; purging the TiCl4 gas; supplying NH3 gas to the substrate; purging the NH3 gas; and supplying an inhibitor that inhibits adsorption of TiCl4 or NH3 to the substrate. A plurality of cycles each including the supplying the TiCl4 gas, the purging the TiCl4 gas, the supplying the NH3 gas, and the purging the NH3 gas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiCl4 gas or the supplying the NH3 gas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiCl4 gas or the purging the NH3 gas, the supplying the TiCl4 gas or the supplying the NH3 gas is performed.