Abstract: A method includes receiving a series of writes that each requests respective data to be stored at a database. For each respective write, the method includes storing the respective data in a first buffer associated with a first data streaming application and a second buffer associated with a second data streaming application. The method includes transmitting the respective data to the database. The method includes receiving, from the database, confirmation that the respective data of the respective write has been committed to the database. The confirmation includes an order indicator indicating an order the respective data of the respective write was committed to the database relative to other writes in the series of writes. In response to receiving the confirmation, the method includes sending the respective data from the first buffer to the first data streaming application and from the second buffer to the second data streaming application.

Abstract: A method of fabrication a semiconductor device includes forming a stack of semiconductor nanosheets on a semiconductor substrate, and performing a nanosheet fin reveal cut process that etches the stack of semiconductor nanosheets to from a first nanosheet fin and a second nanosheet fin. The first and second nanosheet fins are separated by one another by a distance defining an isolation region. The method further includes forming an isolation wall in the isolation region, where the isolation wall extends continuously from a wall based contacting the semiconductor substrate to an opposing wall upper surface. The method further includes forming an electrically conductive gate stack that surrounds the first nanosheet fin, the second nanosheet fin, and the isolation wall, and forming a gate interlayer dielectric (ILD) on an upper surface the electrically conductive gate stack such that the wall upper surface contacts the gate ILD.

Abstract: A semiconductor device includes a first transistor and a first gate electrically coupled to the first transistor. A second transistor is positioned on top of the first transistor. A second gate is electrically coupled to the second transistor. A dielectric isolation layer is positioned between the first gate and the second gate. A first conductive contact is electrically coupled to the first gate. A second conductive contact is electrically coupled to the second gate. A control of the first gate through the first conductive contact is independent of a control of the second gate through the second conductive contact.

Abstract: A method includes receiving a series of writes that each requests respective data to be stored at a database. For each respective write, the method includes storing the respective data in a first buffer associated with a first data streaming application and a second buffer associated with a second data streaming application. The method includes transmitting the respective data to the database. The method includes receiving, from the database, confirmation that the respective data of the respective write has been committed to the database. The confirmation includes an order indicator indicating an order the respective data of the respective write was committed to the database relative to other writes in the series of writes. In response to receiving the confirmation, the method includes sending the respective data from the first buffer to the first data streaming application and from the second buffer to the second data streaming application.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.