Patents by Inventor Zhang Qing Jun

Zhang Qing Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100102219
    Abstract: Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode.
    Type: Application
    Filed: October 15, 2009
    Publication date: April 29, 2010
    Inventors: Hua Peng, Qingjun Zhang, Jin Lin, Yuanjing Li, Zhiqiang Chen, Shaoji Mao, Zhude Dai, Shiping Cao, Zhongxia Zhang, Yangtian Zhang, Dexu Lin, Qinghua Wang, Zhang Qing Jun