Patents by Inventor Zhangtao Wang
Zhangtao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160141305Abstract: An array substrate comprises a TFT, a data line, a gate line and a passivation layer covering the TFT, the data line and the gate line. The array substrate further includes a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is disposed on the passivation layer and above the TFT, and the second conductive structure is disposed on the passivation layer and above the data line and/or gate line. A method for manufacturing the array substrate and a display device having such an array substrate are also provided.Type: ApplicationFiled: December 11, 2013Publication date: May 19, 2016Inventors: Yusheng XI, Bin FENG, Jiarong LIU, Hongtao LIN, Zhangtao WANG
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Patent number: 9324742Abstract: Embodiments of the invention provide an array substrate comprising a plurality of pixel units, each of the pixel units including a first display electrode, a second display electrode and an insulating portion, wherein, the insulating portion comprises a plurality of first via holes; the first display electrode is disposed at a surface of the insulating portion, and the second display electrode is disposed at bottom surfaces of the first via holes. Embodiments of the invention further provide a method for manufacturing the array substrate.Type: GrantFiled: August 26, 2013Date of Patent: April 26, 2016Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.Inventors: Bin Feng, Hongtao Lin, Zhangtao Wang, Xibin Shao
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Publication number: 20150309379Abstract: A pixel unit comprises a pixel electrode, a data line and a TFT, and further comprises: a backup TFT, a source electrode of which is isolated from the data line, and a drain electrode of which is isolated from the pixel electrode; a first repair line, one end of the first repair line and the source electrode of the backup TFT being isolated from each other and there being an overlapping region therebetween, and the other end of the first repair line and the data line or a source electrode of the TFT being isolated from each other and there being an overlapping region therebetween; and a second repair line.Type: ApplicationFiled: August 12, 2013Publication date: October 29, 2015Applicants: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHOLOGY CO., LTD.Inventors: Zhixiao YAO, Jiarong LIU, Hongtao LIN, Zhangtao WANG
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Patent number: 8816346Abstract: A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.Type: GrantFiled: October 31, 2012Date of Patent: August 26, 2014Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Zhangtao Wang, Haijun Qiu, Tae Yup Min, Seung Moo Rim
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Publication number: 20140054703Abstract: Embodiments of the invention provide an array substrate comprising a plurality of pixel units, each of the pixel units including a first display electrode, a second display electrode and an insulating portion, wherein, the insulating portion comprises a plurality of first via holes; the first display electrode is disposed at a surface of the insulating portion, and the second display electrode is disposed at bottom surfaces of the first via holes. Embodiments of the invention further provide a method for manufacturing the array substrate.Type: ApplicationFiled: August 26, 2013Publication date: February 27, 2014Applicants: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Bin FENG, Hongtao LIN, Zhangtao WANG, Xibin SHAO
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Publication number: 20130056739Abstract: A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.Type: ApplicationFiled: October 31, 2012Publication date: March 7, 2013Inventors: Zhangtao Wang, Haijun Qiu, Tae Yup Min, Seung Moo Rim
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Patent number: 8324033Abstract: A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.Type: GrantFiled: December 18, 2007Date of Patent: December 4, 2012Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Zhangtao Wang, Haijun Qiu, Tae Yup Min, Seung Moo Rim
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Patent number: 8294153Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.Type: GrantFiled: May 6, 2011Date of Patent: October 23, 2012Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Tae Yup Min, Xu Chen
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Patent number: 8289463Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.Type: GrantFiled: October 14, 2011Date of Patent: October 16, 2012Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Xu Chen, Tae Yup Min
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Patent number: 8134158Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.Type: GrantFiled: January 17, 2011Date of Patent: March 13, 2012Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Tae Yup Min
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Publication number: 20120034722Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.Type: ApplicationFiled: October 14, 2011Publication date: February 9, 2012Inventors: Haijun Qiu, Zhangtao Wang, Xu Chen, Tae Yup Min
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Patent number: 8049218Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.Type: GrantFiled: July 6, 2010Date of Patent: November 1, 2011Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Zhangtao Wang, Haijun Qiu, Tae Yup Min, Seung Moo Rim
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Patent number: 8040452Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.Type: GrantFiled: March 23, 2011Date of Patent: October 18, 2011Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Xu Chen, Tae Yup Min
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Publication number: 20110204373Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.Type: ApplicationFiled: May 6, 2011Publication date: August 25, 2011Inventors: Haijun QIU, Zhangtao WANG, Tae Yup MIN, Xu CHEN
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Publication number: 20110171767Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.Type: ApplicationFiled: March 23, 2011Publication date: July 14, 2011Inventors: Haijun QIU, Zhangtao Wang, Xu Chen, Tae Yup Min
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Patent number: 7955911Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.Type: GrantFiled: December 7, 2007Date of Patent: June 7, 2011Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Tae Yup Min, Xu Chen
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Patent number: 7948570Abstract: A thin film transistor (TFT) array substrate for a liquid crystal display comprises a gate line and a data line formed in a display region, a gate connecting line and a data connecting line formed in a PAD region, and a TFT formed at an intersection between the gate line and the data line. The TFT comprises a gate electrode on a base substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, a doped semiconductor layer on the semiconductor layer, and a source electrode and a drain electrode that are on the doped semiconductor layer, and a TFT channel is defined in the semiconductor layer between the source electrode and the drain electrode. The array substrate further comprises a passivation layer that is formed on the source electrode and the drain electrode and a pixel electrode, a portion of which is formed under the drain electrode and connected with the drain electrode.Type: GrantFiled: November 13, 2008Date of Patent: May 24, 2011Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Zhangtao Wang, Haijun Qiu, Tae Yup Min
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Publication number: 20110108849Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.Type: ApplicationFiled: January 17, 2011Publication date: May 12, 2011Inventors: Haijun QIU, Zhangtao WANG, Tae Yup MIN
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Patent number: 7916230Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.Type: GrantFiled: August 6, 2007Date of Patent: March 29, 2011Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Xu Chen, Tae Yup Min
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Patent number: 7892897Abstract: A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.Type: GrantFiled: November 12, 2007Date of Patent: February 22, 2011Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.Inventors: Haijun Qiu, Zhangtao Wang, Tae Yup Min