Patents by Inventor Zhangwu LU

Zhangwu LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-refractive-index hydrogenated silicon film and methods for preparing the same
    Patent number: 11643716
    Abstract: A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: May 9, 2023
    Assignee: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Ruizhi Zhang, Jian Tang, Ying Wang, Hui Yu, Zhangwu Lu, Zhengchi Xu, Qibin Zhang
  • High-Refractive-Index Hydrogenated Silicon Film And Methods For Preparing The Same
    Publication number: 20190352222
    Abstract: A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
    Type: Application
    Filed: January 5, 2018
    Publication date: November 21, 2019
    Applicant: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Ruizhi ZHANG, Jian TANG, Ying WANG, Hui YU, Zhangwu LU, Zhengchi XU, Qibin ZHANG