Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device performance. Described are geometries based on rounded asymmetrical fingers and electrode bases of varying width. Simulations demonstrate benefits for reducing self-heating and thermal power loss, which reduces overall on-state resistance and increases reverse break down voltages.

Abstract: The invention relates to a method of simulation of semiconductor devices, such as wide-bandgap devices. The method employs a device substitution technique and involves simulation of a device which is structurally similar to the target device, and for which it is relatively easy to compute a model. Such a device may have a reduced material bandgap or a different doping/fixed-charge concentration. Based on the model of the simplified device, a model of the device under consideration is produced via a sequence of simulation steps, wherein simulated intermediate devices eventually transform into the target device for which a model is sought.

Abstract: The invention relates to a method of simulation of semiconductor devices, such as wide-bandgap devices. The method employs a device substitution technique and involves simulation of a device which is structurally similar to the target device, and for which it is relatively easy to compute a model. Such a device may have a reduced material bandgap or a different doping/fixed-charge concentration. Based on the model of the simplified device, a model of the device under consideration is produced via a sequence of simulation steps, wherein simulated intermediate devices eventually transform into the target device for which a model is sought.