Patents by Inventor Zhanxin Li

Zhanxin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a silicon nitride thin film using plasma-enhanced chemical vapor deposition
    Patent number: 9431241
    Abstract: A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: August 30, 2016
    Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
    Inventor: Zhanxin Li
  • METHOD FOR MANUFACTURING A SILICON NITRIDE THIN FILM
    Publication number: 20150179437
    Abstract: A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film.
    Type: Application
    Filed: July 30, 2013
    Publication date: June 25, 2015
    Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
    Inventor: Zhanxin Li