Abstract: A circuit board structure and a fabrication method of the same are disclosed according to the present invention. The circuit board structure includes: a carrier board with at least one surface formed with a circuit layer having electrically connecting pads; a first solder mask formed on the carrier board and the circuit layer and formed with first openings for exposing the electrically connecting pads; and a second solder mask formed on the first solder mask and formed with second openings for exposing the first openings and the electrically connecting pads. The first solder mask is made of a high-insulation photosensitive material characterized by presence or absence of impurities, such as microparticles, to have enhanced fluidity for being filled in the circuit layer, thereby preventing metal ions migration and subsequent metal hypha electricity discharge which might otherwise affect electrical performance, therefore the present invention is applicable to fine circuit fabrication.

Abstract: A package structure includes a first carrier board provided with a through hole, at least a filling hole in communication with the through hole, a semiconductor chip received in the through hole, and a fastening member disposed in the filling hole and abutting against the semiconductor chip so as to secure the semiconductor chip in position, thereby preventing the semiconductor chip in the through hole from displacement under an external force.

Abstract: An embedded semiconductor chip structure and a method for fabricating the same are proposed. The structure comprises: a carrier board, therewith a plurality of through openings formed in the carrier board, and through trenches surrounding the through openings in the same; a plurality of semiconductor chips received in the through openings of the carrier board. Subsequently, cutting is processed via the through trenches. Thus, the space usage of the circuit board and the layout design are more efficient. Moreover, shaping time is also shortened.

Abstract: A packaging substrate with an embedded semiconductor component and a method of fabricating the same are provided, including: fixing a semiconductor chip with electrode pads to an assisting layer with apertures through an adhesive member, wherein each of the electrode pads has a bump formed thereon, each of the apertures is filled with a filling material, and the bumps correspond to the apertures, respectively; forming a first dielectric layer on the assisting layer to encapsulate the semiconductor chip; removing the bumps and the filling material to form vias; and forming a first wiring layer on the first dielectric layer and forming first conductive vias in the vias to provide electrical connections between the electrode pads and the first wiring layer, wherein the first wiring layer comprises a plurality of conductive lands formed right on the first conductive vias, respectively.

Abstract: A chip embedded package structure and a fabrication method thereof are proposed. An adhesive layer is formed on a bottom surface of a carrier board having at least one cavity to seal one end of the cavity. At least one semiconductor chip is mounted via its non-active surface on the adhesive layer and received in the cavity. A protection layer is formed on an active surface of the semiconductor chip. A conductive layer is formed on a top surface of the carrier board, the protection layer and the cavity. A patterned resist layer is applied on the conductive layer and is formed with an electroplating opening at a position corresponding to a gap between the cavity and the semiconductor chip. An electroplating process is performed to form a metal layer in the electroplating opening, such that the semiconductor chip can be effectively fixed in the cavity by the metal layer.

Abstract: A circuit board structure and a fabrication method of the same are disclosed according to the present invention. The circuit board structure includes: a carrier board with at least one surface formed with a circuit layer having electrically connecting pads; a first solder mask formed on the carrier board and the circuit layer and formed with first openings for exposing the electrically connecting pads; and a second solder mask formed on the first solder mask and formed with second openings for exposing the first openings and the electrically connecting pads. The first solder mask is made of a high-insulation photosensitive material characterized by presence or absence of impurities, such as microparticles, to have enhanced fluidity for being filled in the circuit layer, thereby preventing metal ions migration and subsequent metal hypha electricity discharge which might otherwise affect electrical performance, therefore the present invention is applicable to fine circuit fabrication.

Abstract: A carrier board structure with a semiconductor component embedded therein and a method for fabricating the same are proposed. The method provides at least one semiconductor component and a carrier having a first surface and a second surface opposed to the first surface and at least one through hole. The semiconductor component has an active surface having a plurality of electrode pads and an inactive surface, opposed to the active surface, having a plurality of recesses. An adhesive layer is formed on the second surface of the carrier for sealing an end of through hole of the carrier. Thus, the semiconductor component can be mounted in the through hole of the carrier, and the inactive surface can be mounted on the adhesive layer, as well as the adhesive layer fills in the recess of semiconductor component and the gap between the through hole of carrier board and semiconductor component.

Abstract: A carrier board structure with a semiconductor chip embedded therein and a method for fabricating the same are proposed. A rectangular cavity is formed at a predetermined position of the carrier board, and at least a breach is formed at a corner of the rectangular cavity, wherein the breach is composed of a plurality of drilling holes. Thus, the breach is capable of providing the rectangular cavity with a larger space for receiving a semiconductor chip in the rectangular cavity, when in the process of disposing the semiconductor chip into the rectangular cavity.

Abstract: An embedded semiconductor chip structure and a method for fabricating the same are proposed. The structure comprises: a carrier board, therewith a plurality of through openings formed in the carrier board, and through trenches surrounding the through openings in the same; a plurality of semiconductor chips received in the through openings of the carrier board. Subsequently, cutting is processed via the through trenches. Thus, the space usage of the circuit board and the layout design are more efficient. Moreover, shaping time is also shortened.

Abstract: A semiconductor device with electroless plating metal connecting layer and a method for fabricating the same are proposed. A supporting board with at least one cavity is provided. At least one semiconductor chip with a plurality of copper electrode pads is received in the cavity and an insulating protecting layer is formed on the semiconductor chip. A plurality of holes is formed in the insulating protecting layer to expose the copper electrode pads. An electroless plating metal connecting layer is formed on the copper electrode pads by electroless plating. Therefore, the electrically connecting process of the semiconductor chip is simplified and easily practiced, and the fabrication cost is reduced.

Abstract: A chip embedded package structure and a fabrication method thereof are proposed. An adhesive layer is formed on a bottom surface of a carrier board having at least one cavity to seal one end of the cavity. At least one semiconductor chip is mounted via its non-active surface on the adhesive layer and received in the cavity. A protection layer is formed on an active surface of the semiconductor chip. A conductive layer is formed on a top surface of the carrier board, the protection layer and the cavity. A patterned resist layer is applied on the conductive layer and is formed with an electroplating opening at a position corresponding to a gap between the cavity and the semiconductor chip. An electroplating process is performed to form a metal layer in the electroplating opening, such that the semiconductor chip can be effectively fixed in the cavity by the metal layer.