Abstract: The present application relates to the technical field of electronic devices, and in particular, to an accessory body and an accessory. The height of the accessory body is less than the contour diameter of the projection plane, and a projection of the accessory body on a plane which is perpendicular to a height direction of the accessory body is the projection plane, and the accessory body has at least one first light-emitting element, and light of the first light-emitting element is emitted from a peripheral side of the accessory body. In this way, it can make it easy to put on the accessory body. Moreover, it can make it easy to track and position the accessory body through light of the first light-emitting element, improve the accuracy of positioning and enhance the user experience.

Abstract: This application provides a communication method and a communication apparatus. The method includes: A policy control function network element receives, from an application function network element, information about a first time window and information about a first parameter, where the first time window is a time window that is of data transfer of a first service, and the first parameter includes parameters of the data transfer of the first service. The policy control function network element determines the policies of the first service and then sends the policies to the application function network element. The information about each policy includes information about N time windows which are determined based on the information about the first time window and the information about the first parameter, and the N time windows are used to transmit or receive data of the first service.

Abstract: A data analytics method, an apparatus, and a system. The method includes receiving, by a data analytics network element, first indication information from a first network element, the first indication information indicating to provide the first network element with mobility analytics information that indicates a location order of a terminal, obtaining mobility related information from a second network element, obtaining the mobility analytics information by the data analytics network element by processing the mobility related information based on the first indication information, where the mobility analytics includes first time information and a location of the terminal in each sub-time period of a first time period, and sending, by the data analytics network element, the mobility analytics information to the first network element.

Abstract: In a data reporting method, a user plane network element sends a first message to a first user plane network element. The first message includes first reporting information, and is for requesting the first user plane network element to report first data based on the first reporting information. The first reporting information includes first indication information or reporting time information. The first indication information is for the first user plane network element to determine whether the reporting of the first data is allowed to be delayed. The reporting time information indicates to the first user plane network element to determine time for reporting the first data. The user plane network element then receives the first data from the first user plane network element.

Abstract: An application function network element sends a first request message, where the first request message is used to request network status information of a terminal device in a candidate range. The application function network element obtains a first response message, where the first response message includes network status information of N1 terminal devices, the terminal device in the candidate range includes the N1 terminal devices, and N1 is a positive integer. The application function network element determines N2 terminal devices based on the network status information of the N1 terminal devices, where the N2 terminal devices are configured to participate in training of a federated learning model, the N1 terminal devices include the N2 terminal devices, and N2 is a positive integer.

Abstract: A communication method and a communication apparatus. A first network element receives a first message and a second message. The first network element subscribes to the first data from a second network element based on the first message. The first network element determines whether the second data can be obtained from the first data. The first network element determines, based on a determining result, whether to subscribe to third data from the second network element. The first network element determines, based on the determining result, whether to subscribe to the second data from the second network element to avoid subscribing to repeated data from the second network element. The second network element is prevented from repeatedly collecting and reporting same data so that a load of the first network element and the second network element can be reduced.

Abstract: Embodiments of this application provide a method for obtaining a data analytics result and a communication apparatus. The method includes: A first network element receives first information from a terminal device, where the first information includes an analytics identity, and the analytics identity is used to identify a data analytics type requested by the terminal device; the first network element obtains a data analytics result corresponding to the data analytics type; and the first network element sends the data analytics result to the terminal device. According to this application, the terminal device may obtain, through the first network element, the data analytics result corresponding to the data analytics type identified by the analytics identity. This helps the terminal device make a quick response based on the data analytics result, and helps improve performance of the terminal device.

Abstract: A communication method and a communication apparatus. The method includes: a first network element obtains information about an analytics type requested by a terminal device; the first network element obtains information about an analytics type to which the terminal device subscribes; the first network element obtains information about an analytics type supported by a data analytics network element; the first network element determines information about an analytics type that is allowed to be requested by the terminal device based on the information about the analytics type requested by the terminal device, the information about the analytics type to which the terminal device subscribes, and the information about the analytics type supported by the data analytics network element; and the first network element sends, to the terminal device, the information about the analytics type that is allowed to be requested by the terminal device.

Abstract: Embodiments of this application provide a communication method, a communication apparatus, and a communication system. The method includes: A data analytics network element receives a request message from a core network element or a third-party network element, where the request message is used to request an analytics result. The data analytics network element sends, to the core network element or the third-party network element, block information and an analytics result corresponding to the block information, where a coverage area of a block corresponding to the block information is smaller than a coverage area of a cell. In this solution, the data analytics network element provides the core network element or the third-party network element with an analytics result at a block granularity that is finer than a cell granularity, so that a more refined operation based on the analytics result at the block granularity can be performed.

Abstract: A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A lower portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the lower portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.

Abstract: A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A bottom plug portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the bottom plug portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.

Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method of forming a conductive via element disclosed herein includes forming a via opening in a substrate, the via opening extending through an interlayer dielectric layer formed above the substrate and a device layer formed below the interlayer dielectric layer, and extending into the substrate. The method also includes forming a first portion of the conductive via element comprising a first conductive contact material in a bottom portion of the via opening, and forming a second portion of the conductive via element comprising a second conductive contact material different from the first conductive contact material in an upper portion of the via opening and above the first portion.

Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method disclosed herein includes forming a layer of isolation material above a via opening formed in a semiconductor device, the via opening extending into a substrate of the semiconductor device. The method also includes performing a first planarization process to remove at least an upper portion of the layer of isolation material formed outside of the via opening, and forming a conductive via element inside of the via opening after performing the first planarization process.

Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method of forming a conductive via element disclosed herein includes forming a via opening in a substrate, the via opening extending through an interlayer dielectric layer formed above the substrate and a device layer formed below the interlayer dielectric layer, and extending into the substrate. The method also includes forming a first portion of the conductive via element comprising a first conductive contact material in a bottom portion of the via opening, and forming a second portion of the conductive via element comprising a second conductive contact material different from the first conductive contact material in an upper portion of the via opening and above the first portion.

Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method disclosed herein includes forming a layer of isolation material above a via opening formed in a semiconductor device, the via opening extending into a substrate of the semiconductor device. The method also includes performing a first planarization process to remove at least an upper portion of the layer of isolation material formed outside of the via opening, and forming a conductive via element inside of the via opening after performing the first planarization process.

Abstract: In an embodiment of the present invention, a call request is received from a calling party. A ring tone is selectively provided to the calling party based on at least one of a calling party identifier and a time parameter. In another embodiment of the present invention, a call request is received from a calling party. A message including a video element is selectively provided based on at least one of a calling party identifier and a time parameter.

Abstract: A radio frequency front-end receiver includes a single stage low noise amplifier connected with a resistor array and a capacitor array, and a Gilbert-type mixer connected with a PMOS transconductance stage, an inductor and a serially connected current source. The resistor array enables the adjustment of the power gain of the low noise amplifier. The capacitor array tunes the low noise amplifier so that the maximum power gain is at the desired operating frequency. The PMOS transconductance stage reduces the power consumption of the mixer. The inductor increases the impedance and the current source improves the common-mode rejection of the mixer.

Abstract: A radio frequency front-end receiver includes a single stage low noise amplifier connected with a resistor array and a capacitor array, and a Gilbert-type mixer connected with a PMOS transconductance stage, an inductor and a serially connected current source. The resistor array enables the adjustment of the power gain of the low noise amplifier. The capacitor array tunes the low noise amplifier so that the maximum power gain is at the desired operating frequency. The PMOS transconductance stage reduces the power consumption of the mixer. The inductor increases the impedance and the current source improves the common-mode rejection of the mixer.