Patents by Inventor Zhao LYU

Zhao LYU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory system
    Patent number: 11942180
    Abstract: A memory system includes semiconductor memory devices and a control device. Each of the semiconductor memory devices includes a first pad to which a first signal is input, a second pad to which a second signal is input, a third pad to which a third signal is input, a memory cell array, a sense amplifier, and a data register. In a first mode, after the first signal is switched, a command set instructing a data out operation is input via the second pad. In a second mode, after the first signal is switched, the command is input via at least the third pad. The control device executes a first operation assigning different addresses to the respective semiconductor memory devices and a second operation causing the modes of the respective semiconductor memory devices to be switched from the first to the second mode.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: March 26, 2024
    Assignee: KIOXIA CORPORATION
    Inventors: Zhao Lyu, Akio Sugahara, Takehisa Kurosawa, Yuji Nagai, Hisashi Fujikawa
  • Well cementing method for improving well cementing quality by controlling hydration heat of cement slurry
    Patent number: 11926787
    Abstract: A well cementing method is described for improving cementing quality by controlling the hydration heat of cement slurry. By controlling the degree and/or rate of hydration heat release from cement slurry, the method improves the hydration heat release during formation of cement with curing of cement slurry, improves the binding quality between the cement and the interfaces, and in turn improves the cementing quality at the open hole section and/or the overlap section. The cementing method improves cementing quality of oil and gas wells and reduces the risk of annular pressure.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: March 12, 2024
    Assignees: PetroChina Company Limited, CNPC Engineering Technology R&D Company Limited
    Inventors: Shuoqiong Liu, Hua Zhang, Jianzhou Jin, Ming Xu, Yongjin Yu, Fengzhong Qi, Congfeng Qu, Hong Yue, Youcheng Zheng, Wei Li, Yong Ma, Youzhi Zheng, Zhao Huang, Jinping Yuan, Zhiwei Ding, Chongfeng Zhou, Chi Zhang, Zishuai Liu, Hongfei Ji, Yuchao Guo, Xiujian Xia, Yong Li, Jiyun Shen, Huiting Liu, Yusi Feng, Bin Lyu
  • MEMORY SYSTEM
    Publication number: 20230066699
    Abstract: A memory system includes semiconductor memory devices and a control device. Each of the semiconductor memory devices includes a first pad to which a first signal is input, a second pad to which a second signal is input, a third pad to which a third signal is input, a memory cell array, a sense amplifier, and a data register. In a first mode, after the first signal is switched, a command set instructing a data out operation is input via the second pad. In a second mode, after the first signal is switched, the command is input via at least the third pad. The control device executes a first operation assigning different addresses to the respective semiconductor memory devices and a second operation causing the modes of the respective semiconductor memory devices to be switched from the first to the second mode.
    Type: Application
    Filed: June 27, 2022
    Publication date: March 2, 2023
    Applicant: KIOXIA CORPORATION
    Inventors: Zhao LYU, Akio SUGAHARA, Takehisa KUROSAWA, Yuji NAGAI, Hisashi FUJIKAWA