Patents by Inventor Zhaohao Wang

Zhaohao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910029
    Abstract: A complementary magnetic memory cell includes: a heavy metal film or an antiferromagnetic film, a first magnetic tunnel junction, a second magnetic tunnel junction, a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode; wherein the first magnetic tunnel junction and the second magnetic tunnel junction are fabricated above the heavy metal film or the antiferromagnetic film; the first electrode, the second electrode and the third electrode are fabricated under the heavy metal film or the antiferromagnetic film; the fourth electrode is fabricated above the first magnetic tunnel junction, and the fifth electrode is fabricated above the second magnetic tunnel junction; to store one bit of data, the first magnetic tunnel junction and the second magnetic tunnel junction are arranged in a pair of complementary resistance states, wherein one magnetic tunnel junction is set to a high resistance state and the other remains unchanged.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: February 2, 2021
    Assignee: BEIHANG UNIVERSITY
    Inventors: Weisheng Zhao, Zhaohao Wang, Erya Deng
  • Patent number: 10388344
    Abstract: A magnetic memory includes one or more magnetic tunnel junctions, a heavy metal or anti-ferromagnetic strip film, a first bottom electrode and a second bottom electrode. Every magnetic tunnel junction is located on the strip film and represents a memory cell; the first bottom electrode and the second bottom electrode are respectively connected with two ends of the heavy metal or anti-ferromagnetic strip film; every magnetic tunnel junction includes a first ferromagnetic metal, a first oxide, a second ferromagnetic metal, a first synthetic antiferromagnetic layer and an Xth top electrode from bottom to top in sequence, wherein X is a serial number of the memory cell. A data writing method combines spin orbit torque with spin transfer torque to write data, and respectively applies two currents to the magnetic tunnel junction and the heavy metal or anti-ferromagnetic strip film. Only one current is unable to complete data writing.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: August 20, 2019
    Assignee: BEIHANG UNIVERSITY
    Inventors: Weisheng Zhao, Zhaohao Wang, Mengxing Wang, Wenlong Cai
  • Publication number: 20190051339
    Abstract: A complementary magnetic memory cell includes: a heavy metal film or an antiferromagnetic film, a first magnetic tunnel junction, a second magnetic tunnel junction, a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode; wherein the first magnetic tunnel junction and the second magnetic tunnel junction are fabricated above the heavy metal film or the antiferromagnetic film; the first electrode, the second electrode and the third electrode are fabricated under the heavy metal film or the antiferromagnetic film; the fourth electrode is fabricated above the first magnetic tunnel junction, and the fifth electrode is fabricated above the second magnetic tunnel junction; to store one bit of data, the first magnetic tunnel junction and the second magnetic tunnel junction are arranged in a pair of complementary resistance states, wherein one magnetic tunnel junction is set to a high resistance state and the other remains unchanged.
    Type: Application
    Filed: October 16, 2018
    Publication date: February 14, 2019
    Inventors: Weisheng Zhao, Zhaohao Wang, Erya Deng
  • Publication number: 20180277184
    Abstract: A magnetic memory includes one or more magnetic tunnel junctions, a heavy metal or anti-ferromagnetic strip film, a first bottom electrode and a second bottom electrode. Every magnetic tunnel junction is located on the strip film and represents a memory cell; the first bottom electrode and the second bottom electrode are respectively connected with two ends of the heavy metal or anti-ferromagnetic strip film; every magnetic tunnel junction includes a first ferromagnetic metal, a first oxide, a second ferromagnetic metal, a first synthetic antiferromagnetic layer and an Xth top electrode from bottom to top in sequence, wherein X is a serial number of the memory cell. A data writing method combines spin orbit torque with spin transfer torque to write data, and respectively applies two currents to the magnetic tunnel junction and the heavy metal or anti-ferromagnetic strip film. Only one current is unable to complete data writing.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 27, 2018
    Inventors: Weisheng Zhao, Zhaohao Wang, Mengxing Wang, Wenlong Cai
  • Patent number: 10020044
    Abstract: A high-density magnetic memory device includes: a heavy metal strip or an antiferromagnet strip with a thickness of 0-20 nm, and a plurality of magnetic tunnel junctions manufactured thereon, wherein each of the magnetic tunnel junctions represents a memory bit, which from bottom to top comprises a first ferromagnetic metal with a thickness of 0-3 nm, an oxide with a thickness of 0-2 nm, a second ferromagnetic metal with a thickness of 0-3 nm, a synthetic antiferromagnetic layer with a thickness of 10-20 nm and a No. X top electrode with a thickness of 10-200 nm, wherein an X value is a serial number of the memory bit; two ends of the heavy metal strip or the antiferromagnet strip are respectively plated with a first bottom electrode and a second bottom electrode. The write operation for the memory device of the present invention is accomplished by applying unidirectional write currents.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: July 10, 2018
    Assignee: BEIHANG UNIVERSITY
    Inventors: Weisheng Zhao, Zhaohao Wang, Mengxing Wang, Lei Zhang
  • Publication number: 20180061482
    Abstract: A high-density magnetic memory device includes: a heavy metal strip or an antiferromagnet strip with a thickness of 0-20 nm, and a plurality of magnetic tunnel junctions manufactured thereon, wherein each of the magnetic tunnel junctions represents a memory bit, which from bottom to top comprises a first ferromagnetic metal with a thickness of 0-3 nm, an oxide with a thickness of 0-2 nm, a second ferromagnetic metal with a thickness of 0-3 nm, a synthetic antiferromagnetic layer with a thickness of 10-20 nm and a No. X top electrode with a thickness of 10-200 nm, wherein an X value is a serial number of the memory bit; two ends of the heavy metal strip or the antiferromagnet strip are respectively plated with a first bottom electrode and a second bottom electrode. The write operation for the memory device of the present invention is accomplished by applying unidirectional write currents.
    Type: Application
    Filed: October 26, 2017
    Publication date: March 1, 2018
    Inventors: Weisheng Zhao, Zhaohao Wang, Mengxing Wang, Lei Zhang