Abstract: The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.

Abstract: The present disclosure relates to an OLED panel and a manufacturing method thereof. The OLED panel includes: a glass substrate; a TFT light shielding layer; a buffer layer, a semiconductor layer; a patterned gate insulating layer; a patterned first metal layer; a interlayer insulating layer; a patterned second metal layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter; a planarization layer, wherein the planarization layer is provided with an opening structure corresponding to a storage capacitor area; an anode; a pixel defining layer; a light emitting layer; and a cathode. The present disclosure further provides a manufacturing method of an OLED panel thereof. The OLED panel and the manufacturing method thereof of the present disclosure can effectively increase the storage capacitance of the OLED panel, reduce the design area of the storage capacitor, and improve the panel aperture ratio.

Abstract: An inkjet printing OLED display panel and manufacturing method are provided. The method includes sequentially forming a passivation layer and a. planarization layer on thin-film transistors on a glass substrate, and the passivation layer covers the thin-film transistors; forming vias both at the passivation layer and the planarization layer; forming anodes on the planarization layer, and the anodes are electrically connected to the thin-film transistors through the vias; depositing a pixel definition layer on the planarization layer, and the pixel definition layer covers the anodes; using a half-tone mask to define a pattern of the pixel definition layer such that a region of the pixel definition layer located above the anodes forms a notch, and a height of the pixel definition layer located between the anodes is decreased; using an inkjet printing technology to form a light-emitting layer in the notch of the pixel definition layer.

Abstract: Provided are an ink jet printing organic light emitting diode display panel and a manufacturing method thereof. The method includes: sequentially forming a passivation layer and a planarization layer on a carrier substrate prepared with one pair of thin film transistors, wherein the passivation layer covers the one pair of thin film transistors; forming one pair of vias in the passivation layer and the planarization layer; forming one pair of anodes on the planarization layer, wherein the one pair of anodes are electrically connected to the one pair of thin film transistors through the one pair of vias in the passivation layer and the planarization layer; preparing an electrode separation layer between the one pair of anodes with Al2O3 or an organic photoresist material; forming a light emitting layer over the one pair of anodes by ink jet printing, wherein the light emitting layer covers the electrode separation layer.

Abstract: The present disclosure provides a transparent OLED display and a manufacturing method thereof. The manufacturing method of the transparent OLED display forms an active layer and a first storage capacitor electrode in the same process. The first storage capacitor electrode is made of the transparent metal oxide semiconductor material. A second storage capacitor electrode is manufactured by two photolithography processes so the second storage capacitor electrode is made of only a transparent conductive oxide material. A storage capacitor region where the first storage capacitor electrode and the second storage capacitor electrode are located is a transparent region. Thus, light transmittance and transparent display effect of the transparent OLED display is enhanced. Further, a terminal located in a peripheral region is formed and only made of the transparent conductive oxide material to prevent it from being corroded by water and oxygen. It enhances service life of the transparent OLED display.

Abstract: A ultraviolet (UV) pretreatment apparatus used in vacuum evaporation includes a housing having a curing chamber disposed inside the housing; an inlet disposed at one end of the housing and an outlet disposed at an opposite end of the housing; and a UV source disposed in the curing chamber. A light absorption layer is disposed on inner walls of the curing chamber.

Abstract: This invention discloses an array substrate, a display device and a manufacturing method thereof. The array substrate includes a base substrate and a low temperature polysilicon transistor and an oxide transistor positioned on the base substrate; the low temperature polysilicon transistor includes a laminated polysilicon layer and a first insulating layer, the first insulating layer comprising a silicon oxide layer and silicon nitride layer, wherein the silicon nitride layer is positioned between the polysilicon layer and the silicon oxide layer; the oxide transistor includes a laminated oxide semiconductor layer and a second insulating layer, and the second insulating layer is free of a silicon nitride layer. By the method, the leakage problem of the low temperature polysilicon transistor is effectively reduced, and the reliability of the oxide transistor is improved.

Abstract: This disclosure discloses an array substrate and a manufacturing method, and a display device, the array substrate including: a channel layer; a gate insulating layer including a first portion and a second portion connected side by side, arranged on the channel layer, and exposing a source and drain contact zone on the channel layer, the second portion of the gate insulating layer being located on both sides of the first portion of the gate insulating layer; a gate layer, disposed on the first portion of the gate insulating layer; and a source and a drain, correspondingly connected to the contact region of the source and drain of the channel layer respectively. The array substrate of this disclosure solves the array substrate leakage problem caused by conductorizing the channel layer due to performing ion implantation to the channel layer.

Abstract: Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved.