Abstract: The invention provides a method for growing bimodal-sized InAs/GaAs quantum dots, quantum dots, and a quantum dot composition. The method includes: S1. at a first temperature, depositing n atomic layers of InAs on a GaAs base grown with a GaAs buffer layer, where 1.4<n<1.7; S2. at a second temperature, performing annealing to form quantum dot nuclei, where the second temperature is lower than the first temperature; and S3. continuing to deposit 1.7-n atomic layers of InAs at the second temperature, where the quantum dot nuclei form first quantum dots, when a deposition amount reaches 1.7 atomic layers, second quantum dots are formed on the flat surface between the first quantum dots, and a size of the second quantum dot is smaller than a size of the first quantum dot.