Patents by Inventor Zhaoxu Shen
Zhaoxu Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128160Abstract: A semiconductor structure includes a substrate; a first electrode layer over the substrate; a dielectric layer on a sidewall surface of the first electrode layer; and a second electrode layer over the substrate. The first electrode layer, the dielectric layer, and the second electrode layer are arranged in a direction parallel to a surface of the substrate.Type: ApplicationFiled: October 9, 2023Publication date: April 18, 2024Inventors: Zhaoxu SHEN, Yang LI, Junwei GUO, Yue YIN
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Patent number: 10971367Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a substrate and a semiconductor column vertically protruding from the substrate, sequentially forming a first protective layer and a second protective layer on the substrate, etching a portion of the second protective layer to expose a portion of the first protective layer on the substrate and a portion of the first protective layer on an upper surface of the semiconductor column, removing the exposed portion of the first protective layer on the substrate to expose a lower portion of the semiconductor column, removing a remaining portion of the second protective layer, and forming a first contact material layer on the substrate and in contact with the lower portion of the semiconductor column. The first contact material layer in contact with the lower portion of the semiconductor column does not increase the source series resistance.Type: GrantFiled: July 20, 2020Date of Patent: April 6, 2021Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Zhaoxu Shen, Duohui Bei
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Publication number: 20200350174Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a substrate and a semiconductor column vertically protruding from the substrate, sequentially forming a first protective layer and a second protective layer on the substrate, etching a portion of the second protective layer to expose a portion of the first protective layer on the substrate and a portion of the first protective layer on an upper surface of the semiconductor column, removing the exposed portion of the first protective layer on the substrate to expose a lower portion of the semiconductor column, removing a remaining portion of the second protective layer, and forming a first contact material layer on the substrate and in contact with the lower portion of the semiconductor column. The first contact material layer in contact with the lower portion of the semiconductor column does not increase the source series resistance.Type: ApplicationFiled: July 20, 2020Publication date: November 5, 2020Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Zhaoxu Shen, Duohui Bei
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Patent number: 10755937Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a substrate and a semiconductor column vertically protruding from the substrate, sequentially forming a first protective layer and a second protective layer on the substrate, etching a portion of the second protective layer to expose a portion of the first protective layer on the substrate and a portion of the first protective layer on an upper surface of the semiconductor column, removing the exposed portion of the first protective layer on the substrate to expose a lower portion of the semiconductor column, removing a remaining portion of the second protective layer, and forming a first contact material layer on the substrate and in contact with the lower portion of the semiconductor column. The first contact material layer in contact with the lower portion of the semiconductor column does not increase the source series resistance.Type: GrantFiled: March 12, 2018Date of Patent: August 25, 2020Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventors: Zhaoxu Shen, Duohui Bei
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Patent number: 10559684Abstract: A semiconductor device includes a substrate, a semiconductor column vertically disposed on the substrate, a first contact material layer on the substrate and in contact with a lower portion of the semiconductor column, a first insulating material layer on the first contact material layer and having an upper surface lower than an upper surface of the semiconductor column, a gate dielectric material layer on the first insulating material layer and on a portion of sidewalls of the semiconductor column while exposing an upper portion of the semiconductor column, and a gate stack structure on the gate dielectric material layer and surrounding a portion of the gate dielectric material layer on the sidewalls of the semiconductor column. The gate stack structure includes from inside to outside a P-type work function layer, an N-type work function layer, and a gate.Type: GrantFiled: March 9, 2018Date of Patent: February 11, 2020Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventors: Zhaoxu Shen, Duohui Bei
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Publication number: 20200027966Abstract: A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region. This inventive concept reduces the loss of the interlayer dielectric layer, thus reduces the height loss of the gate electrode.Type: ApplicationFiled: September 26, 2019Publication date: January 23, 2020Inventors: Zhaoxu SHEN, Jianhua JU, Shaofeng YU, Yang LIU, YongMeng LEE
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Patent number: 10535750Abstract: A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region. This inventive concept reduces the loss of the interlayer dielectric layer, thus reduces the height loss of the gate electrode.Type: GrantFiled: November 28, 2017Date of Patent: January 14, 2020Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) CorporationInventors: Zhaoxu Shen, Jianhua Ju, Shaofeng Yu, Yang Liu, YongMeng Lee
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Patent number: 10332980Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure including a semiconductor fin on a substrate, and a trench isolation structure surrounding the fin and having an upper surface flush with an upper surface of the fin and including first and second trench isolation portions on opposite sides of the fin along the fin longitudinal direction, and third and fourth trench isolation portions on distal ends of the fin along a second direction intersecting the longitudinal direction; forming a patterned first hardmask layer having an opening exposing an upper surface of the third and fourth trench isolation portions; and forming a first insulator layer filling the opening to form an insulating portion including a portion of the first insulator layer in the opening and a portion of the trench isolation structure below the portion of the first insulator layer in the opening.Type: GrantFiled: June 2, 2017Date of Patent: June 25, 2019Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventor: Zhaoxu Shen
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Publication number: 20180294161Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a substrate and a semiconductor column vertically protruding from the substrate, sequentially forming a first protective layer and a second protective layer on the substrate;, etching a portion of the second protective layer to expose a portion of the first protective layer on the substrate and a portion of the first protective layer on an upper surface of the semiconductor column, removing the exposed portion of the first protective layer on the substrate to expose a lower portion of the semiconductor column, removing a remaining portion of the second protective layer, and forming a first contact material layer on the substrate and in contact with the lower portion of the semiconductor column. The first contact material layer in contact with the lower portion of the semiconductor column does not increase the source series resistance.Type: ApplicationFiled: March 12, 2018Publication date: October 11, 2018Inventors: Zhaoxu Shen, Duohui Bei
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Publication number: 20180294351Abstract: A semiconductor device includes a substrate, a semiconductor column vertically disposed on the substrate, a first contact material layer on the substrate and in contact with a lower portion of the semiconductor column, a first insulating material layer on the first contact material layer and having an upper surface lower than an upper surface of the semiconductor column, a gate dielectric material layer on the first insulating material layer and on a portion of sidewalls of the semiconductor column while exposing an upper portion of the semiconductor column, and a gate stack structure on the gate dielectric material layer and surrounding a portion of the gate dielectric material layer on the sidewalls of the semiconductor column. The gate stack structure includes from inside to outside a P-type work function layer, an N-type work function layer, and a gate.Type: ApplicationFiled: March 9, 2018Publication date: October 11, 2018Inventors: ZHAOXU SHEN, DUOHUI BEI
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Publication number: 20180151696Abstract: A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region. This inventive concept reduces the loss of the interlayer dielectric layer, thus reduces the height loss of the gate electrode.Type: ApplicationFiled: November 28, 2017Publication date: May 31, 2018Inventors: Zhaoxu SHEN, Jianhua JU, Shaofeng YU, Yang LIU, YongMeng LEE
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Publication number: 20180006135Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure including a semiconductor fin on a substrate, and a trench isolation structure surrounding the fin and having an upper surface flush with an upper surface of the fin and including first and second trench isolation portions on opposite sides of the fin along the fin longitudinal direction, and third and fourth trench isolation portions on distal ends of the fin along a second direction intersecting the longitudinal direction; forming a patterned first hardmask layer having an opening exposing an upper surface of the third and fourth trench isolation portions; and forming a first insulator layer filling the opening to form an insulating portion including a portion of the first insulator layer in the opening and a portion of the trench isolation structure below the portion of the first insulator layer in the opening.Type: ApplicationFiled: June 2, 2017Publication date: January 4, 2018Inventor: Zhaoxu Shen
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Patent number: 9425100Abstract: Methods and transistors for circuit structures are provided. The methods include, for instance: defining a channel region in a substrate, the channel region having at least one channel region sidewall adjoining an isolation material; recessing the isolation material to expose an upper portion of the at least one channel region sidewall; and providing a gate structure over a gate interface area with the channel region. The gate interface area includes at least the upper portion of the at least one channel region sidewall and an upper surface of the channel region so that a threshold voltage of the gate structure may be reduced. The methods may also include etching an elongate notch in the upper portion of the at least one channel region sidewall to increase a size of the gate interface area and further reduce the threshold voltage of the gate structure.Type: GrantFiled: April 23, 2015Date of Patent: August 23, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Zhaoxu Shen, Min-hwa Chi, Haiting Wang, Qin Wang, Meixiong Zhao, Duohui Bei
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Patent number: 9379186Abstract: Methods for preparing CMOS transistors having longer effective gate lengths and the resulting devices are disclosed. Embodiments include forming a dummy gate bound by spacers on opposing sides thereof, on a substrate; removing the dummy gate to form a trench between the spacers; modifying a gate channel portion of the substrate between the spacers to form inner or outer sidewalls; depositing a conformal high-k dielectric layer on the modified gate channel portion; and forming a metal gate in the trench.Type: GrantFiled: January 30, 2015Date of Patent: June 28, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Qin Wang, Min-hwa Chi, Meixiong Zhao, Zhaoxu Shen, Haiting Wang, Lucas M. Salazar, Lan Yang