Patents by Inventor Zhaoyao Zhan

Zhaoyao Zhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101361
    Abstract: A GAA transistor includes a semiconductor substrate. A first shallow trench isolation (STI) is embedded in the semiconductor substrate. A top surface of the first STI is lower than a top surface of the semiconductor substrate. A nanowire crosses the first STI and is disposed on the first STI. A gate structure contacts and wraps around the nanowire. A source electrode contacts a first end of the nanowire. A drain electrode contacts a second end of the nanowire.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: August 24, 2021
    Inventors: Zhaoyao Zhan, Qianwei Ding, Xiaohong Jiang, Ching Hwa Tey
  • Publication number: 20210167170
    Abstract: A method of manufacturing a semiconductor device including following steps is provided. A substrate is provided. An ion implantation process is performed on the substrate to form doped material layers at different depth positions of the substrate and to define at least one nanowire layer. The at least one nanowire layer and the doped material layers are alternately stacked. A patterning process is performed on the at least one nanowire layer and the doped material layers to form at least one nanowire and doped layers. The at least one nanowire and the doped layers are alternately stacked to form a stack structure. A dummy gate structure spanning over the stack structure is formed. Spacers located on sidewalls of the dummy gate structure is formed. The dummy gate structure is removed to expose the at least one nanowire and the doped layers. The exposed doped layers are removed to form openings.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 3, 2021
    Applicant: United Microelectronics Corp
    Inventor: Zhaoyao Zhan