Patents by Inventor Zhaoyao Zhan
Zhaoyao Zhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230387174Abstract: An image sensor structure includes a semiconductor substrate; an interconnection layer on the semiconductor substrate; nano-pillar structures, each including a first doped layer, a second doped layer and a third doped layer stacked in sequence; conductive structures, respectively electrically connected to the first doped layer and the interconnection layer, the second doped layer and the interconnection layer, and the third doped layer and the interconnection layer; a first insulating layer on the interconnection layer and wrapping the nano-pillar structures and the conductive structures, wherein the first doping layer is exposed on the first insulating layer; a transparent barrier layer on the first insulating layer; and a photoelectric thin film structure on the first insulating layer and electrically connected to the interconnection layer. The photoelectric thin film structure includes photoconductive film portions.Type: ApplicationFiled: July 11, 2022Publication date: November 30, 2023Inventors: Zhaoyao Zhan, Jing Feng, XIAOHONG JIANG, CHING HWA TEY
-
Publication number: 20230225139Abstract: The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layerType: ApplicationFiled: March 17, 2023Publication date: July 13, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, QIANWEI DING, XIAOHONG JIANG, CHING HWA TEY
-
Patent number: 11641000Abstract: The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.Type: GrantFiled: December 29, 2020Date of Patent: May 2, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, Qianwei Ding, Xiaohong Jiang, Ching Hwa Tey
-
Publication number: 20230071411Abstract: A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.Type: ApplicationFiled: November 10, 2022Publication date: March 9, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, QIANWEI DING, XIAOHONG JIANG, CHING HWA TEY
-
Publication number: 20230076390Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.Type: ApplicationFiled: November 10, 2022Publication date: March 9, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, QIANWEI DING, XIAOHONG JIANG, CHING HWA TEY
-
Patent number: 11527561Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a photodiode.Type: GrantFiled: July 16, 2020Date of Patent: December 13, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, Qianwei Ding, Xiaohong Jiang, Ching Hwa Tey
-
Publication number: 20220336519Abstract: An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.Type: ApplicationFiled: May 17, 2021Publication date: October 20, 2022Applicant: United Microelectronics Corp.Inventors: Zhaoyao Zhan, Jing Feng, Qianwei Ding, Xiaohong Jiang, Ching-Hwa Tey
-
Publication number: 20220165895Abstract: The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.Type: ApplicationFiled: December 29, 2020Publication date: May 26, 2022Inventors: Zhaoyao Zhan, QIANWEI DING, XIAOHONG JIANG, CHING HWA TEY
-
Publication number: 20210384231Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a photodiode.Type: ApplicationFiled: July 16, 2020Publication date: December 9, 2021Inventors: Zhaoyao Zhan, QIANWEI DING, XIAOHONG JIANG, CHING HWA TEY
-
Patent number: 11189691Abstract: A method of manufacturing a semiconductor device including following steps is provided. A substrate is provided. An ion implantation process is performed on the substrate to form doped material layers at different depth positions of the substrate and to define at least one nanowire layer. The at least one nanowire layer and the doped material layers are alternately stacked. A patterning process is performed on the at least one nanowire layer and the doped material layers to form at least one nanowire and doped layers. The at least one nanowire and the doped layers are alternately stacked to form a stack structure. A dummy gate structure spanning over the stack structure is formed. Spacers located on sidewalls of the dummy gate structure is formed. The dummy gate structure is removed to expose the at least one nanowire and the doped layers. The exposed doped layers are removed to form openings.Type: GrantFiled: December 2, 2019Date of Patent: November 30, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventor: Zhaoyao Zhan
-
Patent number: 11101361Abstract: A GAA transistor includes a semiconductor substrate. A first shallow trench isolation (STI) is embedded in the semiconductor substrate. A top surface of the first STI is lower than a top surface of the semiconductor substrate. A nanowire crosses the first STI and is disposed on the first STI. A gate structure contacts and wraps around the nanowire. A source electrode contacts a first end of the nanowire. A drain electrode contacts a second end of the nanowire.Type: GrantFiled: May 28, 2020Date of Patent: August 24, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhaoyao Zhan, Qianwei Ding, Xiaohong Jiang, Ching Hwa Tey
-
Publication number: 20210167170Abstract: A method of manufacturing a semiconductor device including following steps is provided. A substrate is provided. An ion implantation process is performed on the substrate to form doped material layers at different depth positions of the substrate and to define at least one nanowire layer. The at least one nanowire layer and the doped material layers are alternately stacked. A patterning process is performed on the at least one nanowire layer and the doped material layers to form at least one nanowire and doped layers. The at least one nanowire and the doped layers are alternately stacked to form a stack structure. A dummy gate structure spanning over the stack structure is formed. Spacers located on sidewalls of the dummy gate structure is formed. The dummy gate structure is removed to expose the at least one nanowire and the doped layers. The exposed doped layers are removed to form openings.Type: ApplicationFiled: December 2, 2019Publication date: June 3, 2021Applicant: United Microelectronics CorpInventor: Zhaoyao Zhan