Patents by Inventor Zhaoyin D. Wu

Zhaoyin D. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150145615
    Abstract: A circuit includes a first finger capacitor having a first bus line coupled to a first plurality of finger elements and a second bus line coupled to a second plurality of finger elements. The first bus line is parallel to the second bus line. The circuit further includes an inductor having a first leg oriented perpendicular to the first bus line and the second bus line. The first leg of the inductor is coupled to a center of the first bus line.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: Xilinx, Inc.
    Inventors: Jing Jing, Shuxian Wu, Zhaoyin D. Wu
  • Patent number: 8941974
    Abstract: An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor includes a first plurality of conductive digits and a second plurality of conductive digits positioned in an interlocking manner with the first plurality of conductive digits, such that an interdigitated structure is formed. The first plurality of conductive digits and the second plurality of conductive digits collectively form a set of digits, where the width of a first digit in the set of digits is non-uniform with respect to a second digit in the set of digits.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: January 27, 2015
    Assignee: Xilinx, Inc.
    Inventors: Zhaoyin D. Wu, Parag Upadhyaya, Xuewen Jiang
  • Patent number: 8592943
    Abstract: An inductor structure implemented within a semiconductor integrated circuit (IC) can include a coil of conductive material that includes a center terminal located at a midpoint of a length of the coil. The coil can be symmetrical with respect to a centerline bisecting the center terminal. The coil can include a first differential terminal and a second differential terminal each located at an end of the coil and opposite the center terminal. The inductor structure can include an isolation ring surrounding the coil. In some cases, the inductor structure can include a return line of conductive material positioned on the center line.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: November 26, 2013
    Assignee: Xilinx, Inc.
    Inventors: Zhaoyin D. Wu, Xuewen Jiang, Parag Upadhyaya
  • Patent number: 8427266
    Abstract: An inductor structure can be implemented within a semiconductor integrated circuit (IC). The inductor structure can include a coil of conductive material having a first terminal and a second terminal each located at an opposing end of the coil. The inductor structure can include a patterned ground shield including a plurality of fingers implemented within an IC process layer located between the coil of conductive material and a substrate of the IC. The inductor structure also can include an isolation wall formed to encompass the coil and the patterned ground shield. The isolation wall can be coupled to one end of each finger.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: April 23, 2013
    Assignee: Xilinx, Inc.
    Inventors: Zhaoyin D. Wu, Parag Upadhyahya, Xuewen Jiang, Jing Jing, Shuxian Wu
  • Publication number: 20130063861
    Abstract: An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor includes a first plurality of conductive digits and a second plurality of conductive digits positioned in an interlocking manner with the first plurality of conductive digits, such that an interdigitated structure is formed. The first plurality of conductive digits and the second plurality of conductive digits collectively form a set of digits, where the width of a first digit in the set of digits is non-uniform with respect to a second digit in the set of digits.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 14, 2013
    Applicant: XILINX, INC.
    Inventors: Zhaoyin D. Wu, Parag Upadhyaya, Xuewen Jiang
  • Publication number: 20120241904
    Abstract: An inductor structure implemented within a semiconductor integrated circuit (IC) can include a coil of conductive material that includes a center terminal located at a midpoint of a length of the coil. The coil can be symmetrical with respect to a centerline bisecting the center terminal. The coil can include a first differential terminal and a second differential terminal each located at an end of the coil and opposite the center terminal. The inductor structure can include an isolation ring surrounding the coil. In some cases, the inductor structure can include a return line of conductive material positioned on the center line.
    Type: Application
    Filed: March 21, 2011
    Publication date: September 27, 2012
    Applicant: XILINX, INC.
    Inventors: Zhaoyin D. Wu, Xuewen Jiang, Parag Upadhyaya
  • Publication number: 20120242446
    Abstract: An inductor structure can be implemented within a semiconductor integrated circuit (IC). The inductor structure can include a coil of conductive material having a first terminal and a second terminal each located at an opposing end of the coil. The inductor structure can include a patterned ground shield including a plurality of fingers implemented within an IC process layer located between the coil of conductive material and a substrate of the IC. The inductor structure also can include an isolation wall formed to encompass the coil and the patterned ground shield. The isolation wall can be coupled to one end of each finger.
    Type: Application
    Filed: March 21, 2011
    Publication date: September 27, 2012
    Applicant: XILINX, INC.
    Inventors: Zhaoyin D. Wu, Parag Upadhyahya, Xuewen Jiang, Jing Jing, Shuxian Wu