Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.

Abstract: This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer. A Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

Abstract: An injection mold and an injection molding method are provided. The injection mold includes a housing and a cover. The housing is provided with a mold cavity. The mold cavity is configured to accommodate a power module. The cover is provided with a plurality of vias. The cover is detachably connected to the housing. The cover is located in the mold cavity and locates the power module jointly with the housing. The plurality of vias are configured to match a plurality of pins of the power module. In this application, the cover is disposed, and the cover is provided with the vias for pins to pass through. By using covers with different arrangement manners of vias, a same set of injection molds can be compatible with power modules of a same series that have different locations of pins. Arrangement manners of vias on different covers are different.

Abstract: A power module (10) and a manufacturing method thereof are disclosed. The power module (10) includes a power assembly (11) and a drive board (12). The power assembly (11) includes a substrate (111), a power chip (112), and a package body (113). The power chip (112) is disposed on a mounting surface (1110) of the substrate (111). The package body (113) packages the power chip (112) on the substrate (111). The drive board (12) is disposed in the package body (113) and is located on a side, of the power chip (112), that backs the mounting surface (1110). The drive board (12) is electrically connected to the power chip (112). In the power module, a parasitic parameter between the drive board (12) and the power assembly (11) can be reduced, thereby improving electrical performance of the power module (10).

Abstract: This application provides a chip, a gallium nitride power device, and a power drive circuit. The chip includes a substrate and a plurality of gallium nitride components disposed on the substrate. The plurality of gallium nitride components are arranged in an array. The gallium nitride component includes an active region and a non-active region separately disposed on the substrate. The non-active region surrounds a side surface of the active region. The active region includes a heterojunction formed by a gallium nitride layer and an aluminum gallium nitride layer. The non-active region includes a plurality of grooves spaced apart. The plurality of grooves penetrate the non-active region and expose the substrate, and the plurality of grooves are used to isolate adjacent gallium nitride components.

Abstract: This application discloses a chip package assembly, an electronic device, and a preparation method of a chip package assembly. The chip package assembly includes a package substrate, a chip, and a heat dissipation part. The package substrate includes an upper conductive layer, a lower conductive layer, and a conductive part connected between the upper conductive layer and the lower conductive layer. The chip includes a front electrode and a back electrode that are disposed opposite each other, the chip is embedded in the package substrate, the conductive part surrounds the chip, the front electrode is connected to the lower conductive layer, and the back electrode is connected to the upper conductive layer. The heat dissipation part is connected to a surface of the upper conductive layer that is away from the chip. The upper conductive layer, the lower conductive layer, and the conductive part each conduct heat.

Abstract: Embodiments of this application disclose a drive circuit of a power device and a drive system, to drive the power device by using a small quantity of components. The drive circuit of the power device includes: a drive signal generation circuit, configured to generate a drive signal; a resistor and a capacitor that are connected in series, coupled to the drive signal generation circuit and the power device, and configured to control turn-on and turn-off of the power device based on the drive signal; and a voltage clamp circuit, coupled to the power device, and configured to control a gate voltage of the power device to be not greater than a gate withstand voltage.

Abstract: A wireless transmission module, chips, a passive component, and a coil are integrated into an integral structure, so that an integration level of the wireless transmission module is improved. In addition, the integral structure can effectively implement independence of the module, and the independent module can be flexibly arranged inside structural design of an electronic device, and does not need to be disposed on a mainboard of the electronic device. Only an input terminal of the wireless transmission module needs to be retained on the mainboard of the electronic device. In addition, the integral structure can further effectively increase a capability of a product for working continuously and normally in an extremely harsh scenario, and improve product reliability. In addition, in the structure of the wireless transmission module, the chips and the coil are integrated, and signal transmission paths between the chips and the coil are relatively short.

Abstract: A gallium nitride (GaN) device, where a drain of the GaN device includes a p-type (P-GaN) layer and a drain metal. The drain metal includes a plurality of first structural intervals and a plurality of second structural intervals. The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact in the second structural intervals, implementing current conduction from a drain to a source of the device.

Abstract: This application provides a power semiconductor device, which includes: a semiconductor substrate, where the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, that is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, where the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate; and a passivation layer.

Abstract: A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.

Abstract: An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n?x gate regions in the n gate regions are connected to the emitter region.

Abstract: This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride GaN buffer layer formed on the substrate; an aluminum gallium nitride AlGaN barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride P-GaN cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P-GaN cap layer. A Schottky contact is formed between the first gate metal and the P-GaN cap layer, and an ohmic contact is formed between the second gate metal and the P-GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

Abstract: The present disclosure relates to the field of printed circuit board technologies. A printed circuit board with good heat dissipation performance is provided and includes a substrate serving as a board body of the printed circuit board, a heating component embedded in the substrate, and a cooling liquid channel disposed in the substrate. The cooling liquid channel is disposed in the printed circuit board, and passes around the heating component to exchange heat with the heating component, so that a heat dissipation path is shortened and heat dissipation efficiency is improved, thereby quickening heat dissipation of the printed circuit board, and prolonging a service life of the printed circuit board.

Abstract: A system in package module assembly is provided, and includes: a substrate, and a chip, an inductor, and an electrical element that are electrically connected to the substrate. The substrate includes a first surface, a second surface opposite to the first surface, and an accommodation groove. The accommodation groove passes through the second surface and the first surface. The inductor includes a magnetic core and an inductive coil. The magnetic core includes a base and a protrusion disposed on an outer surface of the base. The outer surface on which the protrusion is disposed and that is of the base abuts on the second surface. The protrusion is accommodated in the accommodation groove. The inductive coil is disposed in the protrusion. A system in package module and an electronic device are further provided.

Abstract: A wireless transmission module, chips, a passive component, and a coil are integrated into an integral structure, so that an integration level of the wireless transmission module is improved. In addition, the integral structure can effectively implement independence of the module, and the independent module can be flexibly arranged inside structural design of an electronic device, and does not need to be disposed on a mainboard of the electronic device. Only an input terminal of the wireless transmission module needs to be retained on the mainboard of the electronic device. In addition, the integral structure can further effectively increase a capability of a product for working continuously and normally in an extremely harsh scenario, and improve product reliability. In addition, in the structure of the wireless transmission module, the chips and the coil are integrated, and signal transmission paths between the chips and the coil are relatively short.

Abstract: Embodiments of this application disclose an embedded substrate and a method for manufacturing an embedded substrate. The embedded substrate includes a substrate and a chip embedded in the substrate. A height value of the metal boss is greater than 100 micrometers is disposed at each pin on the chip. A drill hole is opened in a region corresponding to the metal boss on the substrate, and a conductive material is filled in the drill hole. A first surface of the substrate is disposed with a conductive layer satisfying a connection requirement of each pin. Pins having the connection requirement are connected by using the metal boss, the conductive material, and the conductive layer. In the embodiments, a particular distance is maintained between the drill hole and the chip by using the metal boss.

Abstract: A system in package module assembly is provided, and includes: a substrate (10), and a chip (12), an inductor (15), and an electrical element (17) that are electrically connected to the substrate. The substrate includes a first surface (111), a second surface (112) opposite to the first surface, and an accommodation groove (113). The accommodation groove passes through the second surface and the first surface. The inductor includes a magnetic core (151) and an inductive coil (153). The magnetic core includes a base (154) and a protrusion (155) disposed on an outer surface of the base. The outer surface on which the protrusion is disposed and that is of the base abuts on the second surface. The protrusion is accommodated in the accommodation groove. The inductive coil is disposed in the protrusion. A system in package module and an electronic device are further provided.

Abstract: A power source management method and a power source are provided. The method includes: comparing a feedforward control signal with a feedback control signal by using a logic control circuit, outputting the signals after the comparison, and performing matching, to obtain control signals of switching transistors of a full-bridge topology circuit; and adjusting the control signals of the switching transistors of the full-bridge topology circuit by using the logic control circuit, so that operating duty cycles of two bridge arms on a primary side match, are symmetric within one switch period of the logic control circuit, or match for a long time, to prevent transformer biasing. The power source management method and the power source can achieve good feedforward performance, suppress input disturbance, and additionally prevent transformer biasing, which ensures that the power source works normally.

Abstract: A power source management method and a power source are provided. The method includes: comparing a feedforward control signal with a feedback control signal by using a logic control circuit, outputting the signals after the comparison, and performing matching, to obtain control signals of switching transistors of a full-bridge topology circuit; and adjusting the control signals of the switching transistors of the full-bridge topology circuit by using the logic control circuit, so that operating duty cycles of two bridge arms on a primary side match, are symmetric within one switch period of the logic control circuit, or match for a long time, to prevent transformer biasing. The power source management method and the power source can achieve good feedforward performance, suppress input disturbance, and additionally prevent transformer biasing, which ensures that the power source works normally.