Abstract: A method and system for robotic multi-peg-in-hole assembly based on hierarchical reinforcement and distributed learning, including: establishing a master-control assembly-strategy model based on deep reinforcement learning by using data of states and actions of a robot; constructing a plurality of sub-process networks based on different assembly interaction environments, updating and training the master-control assembly-strategy model by using interaction data of the robot obtained by the constructed plurality of sub-process networks, and obtaining a trained master-control assembly-strategy model; and controlling and instructing the robot to execute an assembly task of a robotic multi-peg-in-hole assembly by using the trained master-control assembly-strategy model.

Abstract: A MEMS microphone, a microphone unit and an electronic device are disclosed by the present disclosure. The micro-electro-mechanical system microphone comprises: a substrate; a back electrode plate comprising a supporting structure; and a diaphragm located between the substrate and the back electrode plate, wherein the supporting structure comprises a supporting portion used for supporting a periphery of a diaphragm, and a supporting electrode being insulated from the supported diaphragm, and wherein the diaphragm is a stress-free film when being applied no bias, and when being applied a bias, the supporting electrode constrains the periphery of the diaphragm on the supporting portion through electrostatic interaction so as to support the diaphragm in a clamped manner.

Abstract: A beam failure recovery method and device and a communication system. The device includes: a receiver configured to, after a period of time upon the terminal equipment receive a beam failure recovery (BFR) response and before activation or reconfiguration signaling, monitor and/or receive a downlink signal in a first cell of the terminal equipment according to an antenna quasi-co-located (QCL) parameter identical to a selected reference signal (q_new) or a reference signal (q_new) indicated by a higher layer.

Abstract: A signal reception or transmission method and apparatus and a communication system. The signal reception or transmission method includes: a terminal equipment receives downlink control information, the number of bits of at least one of fields of the downlink control information being less than the number of bits of a corresponding field of regular downlink control information; and the terminal equipment receives or transmits a signal scheduled by the downlink control information according to spatial direction indication of the downlink control information. According to this disclosure, the terminal equipment and the network device may receive or transmit a corresponding signal by using accurate power and spatial direction.

Abstract: The present invention relates to the technical field of blood glucose monitoring, and in particular to a split-type real-time blood glucose monitoring apparatus and a manufacturing method therefor. The real-time blood glucose monitoring apparatus comprises a sensor assembly and an emitter assembly. The sensor assembly comprises a first shell, and a conductive plating, a blood glucose sensor and a battery which are arranged on the first shell. The emitter assembly comprises a second shell and a circuit board in the second shell. The conductive plating is arranged on a shell wall of the first shell and is connected to the blood glucose sensor and the battery, and the conductive plating is provided with at least one first connecting structure; and the circuit board is provided with at least one second connecting structure.

Abstract: The present disclosure relates to titanium alloy powder for selective laser melting (SLM) 3D printing, an SLM titanium alloy and the preparation thereof. The used titanium alloy powder comprises the following element components by weight percentage: 2.0 to 4.5% of Al, and 3.0 to 4.5% of V, with the balance being Ti and inevitable impurities. During preparation, a titanium sponge and an Al—V alloy are mixed and pressed into a block as a melting electrode; the titanium alloy ingot having good uniformity is obtained after smelting by using a vacuum consumable electric arc furnace for three times; and the ingot is forged twice and processed into a bar for powder-making. The bar for powder-making is subjected to processes such as washing and drying, atomizing, sieving, and airflow classification to prepare SLM titanium alloy powder. The titanium alloy powder is melted and stacked layer by layer by means of SLM equipment to finally obtain an SML titanium alloy block.

Abstract: Provided is a nano antibody, the amino acid sequence thereof being EVQLQASGGGFVQPGGSLRLSCAASGFTFSSX1AMGWFRQAPGKEREX2VSAISSGGGNTYYADSVKGRFTISRDNSKNTVYLQMNSLRAEDTATYYCVTPGGRLWYYRYDYRCQGTQVTVSS (SEQ ID NO: 1), where X1 is selected from Y or F, and X2 is selected from F or L. The antibody can be used to dissolve Charcot-Leyden crystals (CLCs), thereby reducing pulmonary inflammation, changes in lung function, and mucus production. Further provided is the use of the nano antibody in the preparation of a drug and a reagent for testing Charcot-Leyden crystals (CLCs) and/or Galectin-10 protein.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, rows of memory openings vertically extending through the alternating stack, memory opening fill structures located within a first subset of the rows of memory openings, where each of the memory opening fill structures includes a respective memory film and a respective vertical semiconductor channel extending through an opening at a bottom portion of the respective memory film and contacting a respective underlying semiconductor material portion, and dummy memory opening fill structures located within a second subset of the rows of memory openings that do not belong the first subset, where each of the dummy memory opening fill structures includes a respective dummy memory film and a respective dummy vertical semiconductor channel that is electrically isolated from a respective underlying semiconductor material portion by a bottom portion of the respective dummy memory film.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, rows of memory openings vertically extending through the alternating stack, memory opening fill structures located within a first subset of the rows of memory openings, where each of the memory opening fill structures includes a respective memory film and a respective vertical semiconductor channel extending through an opening at a bottom portion of the respective memory film and contacting a respective underlying semiconductor material portion, and dummy memory opening fill structures located within a second subset of the rows of memory openings that do not belong the first subset, where each of the dummy memory opening fill structures includes a respective dummy memory film and a respective dummy vertical semiconductor channel that is electrically isolated from a respective underlying semiconductor material portion by a bottom portion of the respective dummy memory film.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A device for preventing cables against external damage based on sound source localization comprises a power supply unit, and a sound source sensor unit, a camera unit, a signal processing unit and a wireless communication unit which are electrically connected to the power supply unit. The signal processing unit is connected to the sound source sensor unit, the camera unit and the wireless communication unit. The camera unit is associated with the sound source sensor unit. When the sound source sensor unit recognizes a target signal, the signal processing unit sends a trigger signal to the camera unit, and then the camera unit is triggered to replay a surveillance video to determine whether or not a target really exists. Compared with the prior art, the device has the advantages of being good in safety, high in reliability and the like.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A device for preventing cables against external damage based on sound source localization comprises a power supply unit, and a sound source sensor unit, a camera unit, a signal processing unit and a wireless communication unit which are electrically connected to the power supply unit. The signal processing unit is connected to the sound source sensor unit, the camera unit and the wireless communication unit. The camera unit is associated with the sound source sensor unit. When the sound source sensor unit recognizes a target signal, the signal processing unit sends a trigger signal to the camera unit, and then the camera unit is triggered to replay a surveillance video to determine whether or not a target really exists. Compared with the prior art, the device has the advantages of being good in safety, high in reliability and the like.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.