Abstract: The present disclosure relates to titanium alloy powder for selective laser melting (SLM) 3D printing, an SLM titanium alloy and the preparation thereof. The used titanium alloy powder comprises the following element components by weight percentage: 2.0 to 4.5% of Al, and 3.0 to 4.5% of V, with the balance being Ti and inevitable impurities. During preparation, a titanium sponge and an Al—V alloy are mixed and pressed into a block as a melting electrode; the titanium alloy ingot having good uniformity is obtained after smelting by using a vacuum consumable electric arc furnace for three times; and the ingot is forged twice and processed into a bar for powder-making. The bar for powder-making is subjected to processes such as washing and drying, atomizing, sieving, and airflow classification to prepare SLM titanium alloy powder. The titanium alloy powder is melted and stacked layer by layer by means of SLM equipment to finally obtain an SML titanium alloy block.

Abstract: A high-frequency composite impactor including a high-frequency axial and a torsional impact assembly is disclosed. The high-frequency axial impact assembly includes an upper self-excited oscillation cavity, a lower self-excited oscillation cavity, an adjustment block and a lock nut. The torsional impact assembly includes an upper end cover, a reversing switch, a pendulum, a lower shell, a lower end cover, a nozzle, a connecting block and a retaining ring. The high-frequency axial impact assembly converts the flowing drilling fluid into a pulsed jet to achieve a high-frequency axial impact. The torsional impact assembly enables a torsional impact through a shunt, and finally enables a high-frequency composite impact, which can effectively reduce the stick-slip of the drill string, jump drilling and other downhole accidents. By reducing the friction between the drill string and the borehole wall, the impactor can reduce WOB loss, increase the ROP, and improve the drilling efficiency.

Abstract: An apparatus includes: a receiver configured to: receive a downlink signal related to beam failure recovery, and receive a downlink reference signal; and a transmitter configured to, after receiving the downlink signal, transmit a first uplink signal on a first cell by using a first spatial filter identical to a second spatial filter receiving the downlink reference signal.

Abstract: A signal reception apparatus and method and a communications system. As the starting position of the time domain resource section used for receiving signals is determined according to the predefined or preconfigured reference time domain resource section, time domain resources on which receiving beams determined by the network device and the terminal equipment are based are uniform, thereby avoiding mismatch of the network device and the terminal equipment in receiving and transmitting beams and ensuring transmission reliability of the system.

Abstract: Provided is a nano antibody, the amino acid sequence thereof being EVQLQASGGGFVQPGGSLRLSCAASGFTFSSX1AMGWFRQAPGKEREX2VSAISSGGGNTYYADSVKGRFTISRDNSKNTVYLQMNSLRAEDTATYYCVTPGGRLWYYRYDYRCQGTQVTVSS (SEQ ID NO: 1), where X1 is selected from Y or F, and X2 is selected from F or L. The antibody can be used to dissolve Charcot-Leyden crystals (CLCs), thereby reducing pulmonary inflammation, changes in lung function, and mucus production. Further provided is the use of the nano antibody in the preparation of a drug and a reagent for testing Charcot-Leyden crystals (CLCs) and/or Galectin-10 protein.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, rows of memory openings vertically extending through the alternating stack, memory opening fill structures located within a first subset of the rows of memory openings, where each of the memory opening fill structures includes a respective memory film and a respective vertical semiconductor channel extending through an opening at a bottom portion of the respective memory film and contacting a respective underlying semiconductor material portion, and dummy memory opening fill structures located within a second subset of the rows of memory openings that do not belong the first subset, where each of the dummy memory opening fill structures includes a respective dummy memory film and a respective dummy vertical semiconductor channel that is electrically isolated from a respective underlying semiconductor material portion by a bottom portion of the respective dummy memory film.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, rows of memory openings vertically extending through the alternating stack, memory opening fill structures located within a first subset of the rows of memory openings, where each of the memory opening fill structures includes a respective memory film and a respective vertical semiconductor channel extending through an opening at a bottom portion of the respective memory film and contacting a respective underlying semiconductor material portion, and dummy memory opening fill structures located within a second subset of the rows of memory openings that do not belong the first subset, where each of the dummy memory opening fill structures includes a respective dummy memory film and a respective dummy vertical semiconductor channel that is electrically isolated from a respective underlying semiconductor material portion by a bottom portion of the respective dummy memory film.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A device for preventing cables against external damage based on sound source localization comprises a power supply unit, and a sound source sensor unit, a camera unit, a signal processing unit and a wireless communication unit which are electrically connected to the power supply unit. The signal processing unit is connected to the sound source sensor unit, the camera unit and the wireless communication unit. The camera unit is associated with the sound source sensor unit. When the sound source sensor unit recognizes a target signal, the signal processing unit sends a trigger signal to the camera unit, and then the camera unit is triggered to replay a surveillance video to determine whether or not a target really exists. Compared with the prior art, the device has the advantages of being good in safety, high in reliability and the like.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A device for preventing cables against external damage based on sound source localization comprises a power supply unit, and a sound source sensor unit, a camera unit, a signal processing unit and a wireless communication unit which are electrically connected to the power supply unit. The signal processing unit is connected to the sound source sensor unit, the camera unit and the wireless communication unit. The camera unit is associated with the sound source sensor unit. When the sound source sensor unit recognizes a target signal, the signal processing unit sends a trigger signal to the camera unit, and then the camera unit is triggered to replay a surveillance video to determine whether or not a target really exists. Compared with the prior art, the device has the advantages of being good in safety, high in reliability and the like.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Abstract: A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the high-k dielectric material, and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.