Abstract: This application provides example receiver optical sub-assemblies, example bi-directional optical sub-assemblies, and example optical network devices. One example receiver optical sub-assembly includes a photodiode, a trans-impedance amplifier, and a first filter component. The photodiode is configured to convert an optical signal into an electrical signal, a positive electrode of the photodiode is connected to an input terminal of the trans-impedance amplifier, and a negative electrode of the photodiode is configured to connect to a power supply. The trans-impedance amplifier is configured to amplify the electrical signal output by the photodiode, where a power terminal of the trans-impedance amplifier is configured to connect to a power supply, and a first ground terminal of the trans-impedance amplifier is configured to connect to an external ground.

Abstract: A computer implemented method of predicting a phase stability parameter for a polymer material comprising the steps of providing to a computer processor via a communication interface a digital representation of the polymer material; providing to the processor via the communication interface a data driven model parametrized on a digital representation of historical polymer material, and historical phase stability parameters; determining with the computer processor a phase stability parameter for the polymer material based on the provided data driven model, and the digital representation of the polymer material; providing via the communication interface the determined phase stability parameter.

Abstract: A computer implemented method for generating synthesis specifications comprising the steps of providing to a computer processor via a communication interface a proposed target application property of the new synthesis specification; providing to the computer processor via the communication interface a data driven model, parametrized based on historical synthesis specifications comprising historical list of components, historical amounts for each of the components and historical target criteria, determining via the computer processor a target synthesis specification based on the data driven model and the target application property providing to an output unit via the communication interface the target synthesis specification, comprising a list of target components and the amount of each of the components.

Abstract: Robots are used to dispense a substance, such as heated oil, on target vegetation, such as weeds or specialty crops. The robot can be semi-autonomous or a towed implement and includes an imaging module that captures images of a crop row with the target vegetation and a sprayer that dispenses a micro-dose or micro-doses of the substance. The robot also includes a control system that can determine the position of the robot and identify the target vegetation and its location. Based on this information, the control system activates a sprayer that dispenses the micro-dose of the substance onto the target vegetation in the identified location.

Abstract: The present invention relates to a method for detecting moisture and volatile matter content in raw coal using the value of baseline drift, comprising the following steps: selecting a plurality of types of standard coal having different coal ranks and different ash contents, performing a Raman spectroscopy test and a proximate analysis on each type of standard coal, calculating the value of baseline drift in the Raman spectrum, and setting up the mapping relationship between the value of baseline drift in the Raman spectrum and the characteristic parameters of the moisture and the volatile matter content. The same method and reference are used to perform a Raman spectroscopy test on raw coal to be tested, so as to calculate the value of baseline drift in a Raman spectrum of the raw coal to be tested, and obtain the moisture and volatile matter content of the raw coal to be tested.

Abstract: The present invention relates to a method for detecting moisture and volatile matter content in raw coal using the value of baseline drift, comprising the following steps: selecting a plurality of types of standard coal having different coal ranks and different ash contents, performing a Raman spectroscopy test and a proximate analysis on each type of standard coal, calculating the value of baseline drift in the Raman spectrum, and setting up the mapping relationship between the value of baseline drift in the Raman spectrum and the characteristic parameters of the moisture and the volatile matter content. The same method and reference are used to perform a Raman spectroscopy test on raw coal to be tested, so as to calculate the value of baseline drift in a Raman spectrum of the raw coal to be tested, and obtain the moisture and volatile matter content of the raw coal to be tested.

Abstract: A method for detecting coal quality, including: selecting a plurality of standard coals, acquiring Raman spectral characteristic parameters of each standard coal and characteristic parameters of coal quality components of each standard coal, calculating a mapping relationship between the Raman spectral characteristic parameters and the characteristic parameters of the coal quality components of each standard coal, to establish a relational database of the Raman spectral characteristic parameters and the characteristic parameters of the coal quality components; providing coal to be analyzed, conducting Raman spectroscopy on the coal to yield Raman spectrum of the coal, and performing curve-fitting calculation on the Raman spectrum of the coal to obtain Raman spectral characteristic parameters of the coal; and comparing the Raman spectral characteristic parameters of the coal with the Raman spectral characteristic parameters of the relational database.

Abstract: A method for detecting coal quality, including: selecting a plurality of standard coals, acquiring Raman spectral characteristic parameters of each standard coal and characteristic parameters of coal quality components of each standard coal, calculating a mapping relationship between the Raman spectral characteristic parameters and the characteristic parameters of the coal quality components of each standard coal, to establish a relational database of the Raman spectral characteristic parameters and the characteristic parameters of the coal quality components; providing coal to be analyzed, conducting Raman spectroscopy on the coal to yield Raman spectrum of the coal, and performing curve-fitting calculation on the Raman spectrum of the coal to obtain Raman spectral characteristic parameters of the coal; and comparing the Raman spectral characteristic parameters of the coal with the Raman spectral characteristic parameters of the relational database.

Abstract: A semiconductor device including a substrate, a first well, a second well, a gate, a first doped region, and a second doped region. The substrate includes a first conductive type. The first well includes a second conductive type and is formed in the substrate. The second well includes the second conductive type and is formed in the substrate. The gate is formed on the substrate and overlaps the first and the second wells. The first doped region includes the second conductive type. The first doped region is formed in the first well and self-aligned with the gate. The second doped region includes the second conductive type. The second doped region is formed in the second well and self-aligned with the gate. The gate, the first and the second doped regions constitute a transistor.

Abstract: A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed on the semiconductor substrate, and a hard mask layer formed on the gate. A first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a manner such that the second doped area is separated from the gate by a predetermined distance. A patterned photo resist layer is formed on the semiconductor substrate having an opening on the second side, the exposed gate equal to half the width of the gate. The semiconductor substrate is implanted and annealed to form a dual diffusion area on the second side of the gate using the patterned photo resist layer and the hard mask layer as masks.

Abstract: A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed thereon, a first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a manner such that the second doped area is separated from the gate by a predetermined distance. A patterned photo resist layer is formed on the semiconductor substrate having an opening on the second side, the exposed gate less than half the width of the gate. The semiconductor substrate is implanted and annealed to form a dual diffusion area on the second side of the gate using the patterned photo resist layer as a mask.

Abstract: A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed on the semiconductor substrate, and a hard mask layer formed on the gate. A first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a manner such that the second doped area is separated from the gate by a predetermined distance. A patterned photo resist layer is formed on the semiconductor substrate having an opening on the second side, the exposed gate equal to half the width of the gate. The semiconductor substrate is implanted and annealed to form a dual diffusion area on the second side of the gate using the patterned photo resist layer and the hard mask layer as masks.

Abstract: A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed thereon, a first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a manner such that the second doped area is separated from the gate by a predetermined distance. A patterned photo resist layer is formed on the semiconductor substrate having an opening on the second side, the exposed gate less than half the width of the gate. The semiconductor substrate is implanted and annealed to form a dual diffusion area on the second side of the gate using the patterned photo resist layer as a mask.

Abstract: A delivery notification (D/N) system based on an electronic communications network is provided for performing delivery notification tasks in real time. Each user of the D/N system is assigned with a username and a password that cooperate to uniquely identify the user and determine a specific authority for the user to access the D/N system. The D/N system comprises a base information module including all base information needed by the D/N system, a demand module which allows a purchaser to key in and store purchase order information on the network and to browse delivery information provided by suppliers, a supplier module which allows suppliers to browse and confirm the purchase order information in real time and to create delivery information and store the delivery information in the D/N system, and a reporting module which allows users to search information and to print out searched information in tabular format.